NPN Power Transistor with High Voltage Capacity JSMSEMI MJE350G Collector Emitter Sustaining Voltage
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Product Description
Product Overview
The MJE350G is an NPN Power Transistor designed for high voltage and general purpose applications. It offers a high collector-emitter sustaining voltage of -300V, a minimum DC current gain of 100 at -50mA, and a low collector saturation voltage of -1.0V (Max.) at -50mA. This transistor is the complement to the NPN MJE340.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: MJE350G
- Type: NPN Power Transistor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= -1.0mA; IB= 0 | -300 | V | |
| V(BR)CBO | Collector-Base Breakdown Voltage | IC= -1.0mA; IE= 0 | -300 | V | |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -1.0mA; IC= 0 | -3 | V | |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= -50mA; IB= -5mA | -1.0 | V | |
| ICBO | Collector Cutoff Current | VCB= -300V; IE= 0 | -0.1 | mA | |
| IEBO | Emitter Cutoff Current | VEB= -3V; IC= 0 | -0.1 | mA | |
| hFE | DC Current Gain | IC= -50m A ; VCE= -10V | 30 | 240 |
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCBO | Collector-Base Voltage | -300 | V |
| VCEO | Collector-Emitter Voltage | -300 | V |
| VEBO | Emitter-Base Voltage | -3 | V |
| IC | Collector Current-Continuous | -0.5 | A |
| PC | Collector Power Dissipation | 20 | W |
| Ti | Junction Temperature | 150 | |
| Tstg | Storage Temperature Range | -65~150 |
| Symbol | Parameter | Max | Unit |
|---|---|---|---|
| Rth j-c | Thermal Resistance,Junction to Case | 6.25 | /W |
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