High power audio linear application transistor JSMSEMI MJ15024G JSM NPN power transistor TO3 package

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Product Description

Product Overview

The MJ15022/15024 are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature a TO-3 package, complement to MJ15023/MJ15025, excellent safe operating area, and high DC current gain.

Product Attributes

Brand: JSMICRO Semiconductor
Package Type: TO-3
Complementary Types: MJ15023, MJ15025

Technical Specifications

Symbol	Parameter	Conditions	MJ15022	MJ15024	Unit
Absolute Maximum Ratings
V_CBO	Collector-base voltage	Open emitter	350	400	V
V_CEO	Collector-emitter voltage	Open base	200	250	V
V_EBO	Emitter-base voltage	Open collector	5		V
I_C	Collector current		16		A
I_CM	Collector current-peak		30		A
I_B	Base current		5		A
P_D	Total power dissipation	T_C=25	250		W
T_j	Junction temperature		150
T_stg	Storage temperature		-65~200
Thermal Characteristics
R_{th j-c}	Thermal resistance junction to case		0.70		/W
Characteristics
V_CEO(SUS)	Collector-emitter sustaining voltage	T_j=25 unless otherwise specified	200	250	V
V_CEsat-1	Collector-emitter saturation voltage	I_C=8A; I_B=0.8A	1.4		V
V_CEsat-2	Collector-emitter saturation voltage	I_C=16A; I_B=3.2A	4.0		V
V_BE	Base-emitter on voltage	I_C=8A ; V_CE=4V	2.2		V
I_CEO	Collector cut-off current	V_CE=150V; I_B=0 (MJ15022) V_CE=200V; I_B=0 (MJ15024)		0.5	mA
I_CEX	Collector cut-off current	V_CE=200V; V_BE(off)=1.5V (MJ15022) V_CE=250V; V_BE(off)=1.5V (MJ15024)		0.25	mA
I_EBO	Emitter cut-off current	V_EB=5V; I_C=0	0.5		mA
h_FE-1	DC current gain	I_C=8A ; V_CE=4V	15	60
h_FE-2	DC current gain	I_C=16A ; V_CE=4V	5.0
I_S/b	Second breakdown collector current with base forward biased	V_CE=50Vdc,t=0.5 s, Nonrepetitive V_CE=80Vdc,t=0.5 s, Nonrepetitive	2.0		A
C_OB	Output capacitance	I_E=0 ; V_CB=10V;f=1.0MHz	500		pF
f_T	Transition frequency	I_C=1A ; V_CE=10V;f=1.0MHz	4		MHz