PNP Epitaxial Silicon Transistor JSMSEMI 2SA1837-O for Amplifier Applications Featuring High Voltage
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MOQ:
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Delivery Time:
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Product Description
Product Overview
PNP Epitaxial Silicon Transistor designed for Power Amplifier Applications. Key features include a high collector voltage of VCEO = -230V (min) and a high transition frequency of fT = 70MHz (Typ.). This device is complementary to the 2SC4793 and is a RoHS product.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Epitaxial Silicon
- Certifications: Halogen Free, RoHS
Technical Specifications
| Order Codes | Marking | Package | Packaging | Collector-Emitter Voltage (VCBO) | Collector-Emitter Voltage (VCEO) (IB=0) | Emitter-Base Voltage (VEBO) | Collector Current (IC) (DC) | Base Current (IB) | Collector Dissipation (Ta=25) | Collector Dissipation (Tc=25) | Junction Temperature (Tj) | Storage Temperature (Tstg) | Thermal Resistance (Rth(j-a)) | Thermal Resistance (Rth(j-c)) | Collector Cut-off Current (ICBO) | Emitter Cut-off Current (IEBO) | Breakdown Voltage (V(BR)CEO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(sat)) | Base-Emitter On Voltage (VBE(ON)) | Transition Frequency (fT) | Output Capacitance (Cob) |
| 2SA1837-O | 2SA1837 | TO-220F | Tube | -230 V | -230 V | -5 V | -1 A | -0.1 A | 2.0 W | 20 W | 150 | -55~+150 | 62.5 /W | 6.25 /W | -1.0 A | -1.0 A | -230 V | 100 - 270 | -1.5 V | -1.0 V | 70 MHz | 30 pF |
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