Low noise NPN silicon epitaxial transistor JSMSEMI PBR951 ideal for demanding RF and CATV applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PBR951 is an NPN silicon epitaxial transistor engineered for low-noise amplification across VHF, UHF, and CATV bands. It offers excellent dynamic range and favorable current characteristics, making it suitable for demanding RF applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: PBR951
- Type: NPN silicon epitaxial transistor
- Marking: W2W
- Origin: China (implied by website and page numbering)
Technical Specifications
| Characteristic | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Collector Cutoff Current | ICBO | 1.0 | µA | VCB = 10 V, IE = 0 | ||
| Emitter Cutoff Current | IEBO | 1.0 | µA | VEB = 1.0 V, IC = 0 | ||
| DC Current Gain | hFE* | 50 | 120 | 300 | VCE = 10 V, IC = 20 mA | |
| Gain Bandwidth Product | fT | 7 | GHz | VCE = 10 V, IC = 20 mA | ||
| Feed-Back Capacitance | Cre** | 0.55 | 1.0 | pF | VCB = 10 V, IE = 0, f = 1.0 MHz | |
| Insertion Power Gain | |S21e|² | 2 | 11.5 | dB | VCE = 10 V, IC = 20 mA, f = 1.0 GHz | |
| Noise Figure | NF | 1.1 | 2.0 | dB | VCE = 10 V, IC = 7 mA, f = 1.0 GHz |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector to Base Voltage | VCBO | 20 | V | |
| Collector to Emitter Voltage | VCEO | 12 | V | |
| Emitter to Base Voltage | VEBO | 3.0 | V | |
| Collector Current | IC | 100 | mA | |
| Total Power Dissipation | PT | 200 | mW | TA = 25 °C |
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature | Tstg | -65 to +150 | °C |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina