transistor JSMSEMI NJW0302G-JSM for audio power amplifiers and various electronic circuit applications
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Product Description
Product Overview
The NJW0281G/NJW0302G are semiconductor discrete devices designed for general amplification circuits, audio power amplifiers, power supply regulation, and other electronic circuits. These transistors offer high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for demanding applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model Numbers: NJW0281G, NJW0302G
- Product Type: Semiconductor Discrete Devices
Technical Specifications
| Parameter | NJW0281G/NJW0302G |
| Main Parameters | Low-frequency amplifying transistor, Vceo: 250V, Ic: 15A, Pc: 150W |
| Features | High breakdown voltage, Low leakage current, Superior frequency characteristics |
| Applications | General amplification circuits, Audio power amplifiers, Power supply regulation, Other electronic circuits |
| Absolute Maximum Ratings (Tc=25) | |
| VCBO | 250 V |
| VCEO | 250 V |
| VEBO | 6 V |
| IC | 15 A |
| IB | 1.5 A |
| PC | 150 W |
| Tj | 150 |
| Tstg | -55~+150 |
| Electrical Characteristics | |
| VCBO (IC=1mA, IB=0) | 250 V |
| VCEO (IC=10mA, IB=0) | 250 V |
| VEBO (IC=1mA, IC=0) | 6 V |
| ICBO (VCB=100V, IE=0) | 0.1 mA |
| ICEO (VCE=80V, IB=0) | 0.1 mA |
| IEBO (VEB=4V, IC=0) | 0.1 mA |
| Hfe*1 (VCE=5V, IC=1A) | 55 |
| Hfe*2 (VCE=5V, IC=5A) | 35 |
| VCE(sat)*1 (IC=4A, IB=0.4A) | 1.5 V |
| VCE(sat)*2 (IC=6A, IB=0.6A) | 2.5 V |
| VBE(ON) (VCE=5V, IC=1A) | 1.5 V |
| fT (VCE=5V, IC=1A) | 30 MH |
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