Zener Diode JSMSEMI BZX584C30 Silicon Planar Type with 200 Milliwatt Power Rating and SOD523 Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The JSMICRO Semiconductor BZX584C2V0~BZX584C75 series are silicon planar Zener diodes designed for general-purpose applications. They offer a standard Zener breakdown voltage range from 2.0 V to 75 V and a steady-state power rating of 200 mW. These diodes are housed in a compact SOD-523 package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon Planar
- Package: SOD-523
Technical Specifications
| Type | Marking Code | Zener Voltage (V) at IZT (mA) Min. | Zener Voltage (V) at IZT (mA) Nom. | Zener Voltage (V) at IZT (mA) Max. | Zener Impedance () at IZK (A) | Leakage Current (A) at VR (V) | Forward Voltage (V) at IF = 10 mA |
| BZX584C2V0 | RD | 1.8 | 2.0 | 2.15 | 100 @ 0.5 mA | 120 @ 1.8 V | 0.9 |
| BZX584C2V2 | RE | 2.08 | 2.2 | 2.33 | 100 @ 0.7 mA | 120 @ 2.08 V | 0.9 |
| BZX584C2V4 | Z7/00 | 2.2 | 2.4 | 2.6 | 1000 @ 1 mA | 120 @ 2.2 V | 0.9 |
| BZX584C2V7 | A8/01 | 2.5 | 2.7 | 2.9 | 1000 @ 1 mA | 120 @ 2.5 V | 0.9 |
| BZX584C3V0 | B8/02 | 2.8 | 3.0 | 3.2 | 1000 @ 1 mA | 50 @ 2.8 V | 0.9 |
| BZX584C3V3 | C8/05 | 3.1 | 3.3 | 3.5 | 1000 @ 1 mA | 20 @ 3.1 V | 0.9 |
| BZX584C3V6 | D8/06 | 3.4 | 3.6 | 3.8 | 1000 @ 1 mA | 10 @ 3.4 V | 0.9 |
| BZX584C3V9 | E8 | 3.7 | 3.9 | 4.1 | 1000 @ 1 mA | 5 @ 3.7 V | 0.9 |
| BZX584C4V3 | F8/08 | 4 | 4.3 | 4.6 | 1000 @ 1 mA | 5 @ 4.0 V | 0.9 |
| BZX584C4V7 | G8/09 | 4.4 | 4.7 | 5 | 800 @ 1 mA | 2 @ 4.4 V | 0.9 |
| BZX584C5V1 | H8/0A | 4.8 | 5.1 | 5.4 | 500 @ 1 mA | 2 @ 4.8 V | 0.9 |
| BZX584C5V6 | I8/0C | 5.2 | 5.6 | 6 | 200 @ 1 mA | 1 @ 5.2 V | 0.9 |
| BZX584C6V2 | J8/0E | 5.8 | 6.2 | 6.6 | 100 @ 1 mA | 1 @ 5.8 V | 0.9 |
| BZX584C6V8 | K8/0F | 6.4 | 6.8 | 7.2 | 160 @ 0.5 mA | 0.5 @ 6.4 V | 0.9 |
| BZX584C7V5 | L8/0G | 7 | 7.5 | 7.9 | 160 @ 0.5 mA | 0.5 @ 7.0 V | 0.9 |
| BZX584C8V2 | M8/0H | 7.7 | 8.2 | 8.7 | 160 @ 0.5 mA | 0.5 @ 7.7 V | 0.9 |
| BZX584C9V1 | N8/0K | 8.5 | 9.1 | 9.6 | 160 @ 0.5 mA | 0.5 @ 8.5 V | 0.9 |
| BZX584C10 | O8/0L | 9.4 | 10 | 10.6 | 160 @ 0.1 mA | 0.1 @ 9.4 V | 0.9 |
| BZX584C11 | P8/0M | 10.4 | 11 | 11.6 | 160 @ 0.1 mA | 0.1 @ 10.4 V | 0.9 |
| BZX584C12 | Q8/0N | 11.4 | 12 | 12.7 | 80 @ 0.1 mA | 0.1 @ 11.4 V | 0.9 |
| BZX584C13 | R8/0P | 12.4 | 13.25 | 14.1 | 80 @ 0.1 mA | 0.1 @ 12.4 V | 0.9 |
| BZX584C15 | S8/0T | 14.3 | 15 | 15.8 | 80 @ 0.1 mA | 0.1 @ 14.3 V | 0.9 |
| BZX584C16 | T8/0U | 15.3 | 16.2 | 17.1 | 80 @ 0.1 mA | 0.1 @ 15.3 V | 0.9 |
| BZX584C18 | U8/0W | 16.8 | 18 | 19.1 | 80 @ 0.1 mA | 0.1 @ 16.8 V | 0.9 |
| BZX584C20 | V8/0Z | 18.8 | 20 | 21.2 | 100 @ 0.1 mA | 0.1 @ 18.8 V | 0.9 |
| BZX584C22 | W8/10 | 20.8 | 22 | 23.3 | 100 @ 0.1 mA | 0.1 @ 20.8 V | 0.9 |
| BZX584C24 | X8/11 | 22.8 | 24.2 | 25.6 | 120 @ 0.1 mA | 0.1 @ 22.8 V | 0.9 |
| BZX584C27 | Y8/12 | 25.1 | 27 | 28.9 | 300 @ 0.1 mA | 0.1 @ 25.1 V | 0.9 |
| BZX584C30 | Z8/14 | 28 | 30 | 32 | 300 @ 0.1 mA | 0.1 @ 28 V | 0.9 |
| BZX584C33 | A9/18 | 31 | 33 | 35 | 300 @ 0.1 mA | 0.1 @ 31 V | 0.9 |
| BZX584C36 | B9/19 | 34 | 36 | 38 | 500 @ 0.1 mA | 0.1 @ 34 V | 0.9 |
| BZX584C39 | C9/20 | 37 | 39 | 41 | 500 @ 2 mA | 2 @ 37 V | 0.9 |
| BZX584C43 | D9/Y15/21 | 40 | 43 | 46 | 500 @ 1 mA | 2 @ 40 V | 0.9 |
| BZX584C47 | E9/1A | 44 | 47 | 50 | 500 @ 1 mA | 2 @ 44 V | 0.9 |
| BZX584C51 | F9/1C | 48 | 51 | 54 | 500 @ 1 mA | 1 @ 48 V | 0.9 |
| BZX584C56 | G9/1D | 52 | 56 | 60 | 500 @ 1 mA | 1 @ 52 V | 0.9 |
| BZX584C62 | H9/1E | 58 | 62 | 66 | 500 @ 0.2 mA | 0.2 @ 58 V | 0.9 |
| BZX584C68 | I9/1F | 64 | 68 | 72 | 500 @ 0.2 mA | 0.2 @ 64 V | 0.9 |
| BZX584C75 | J9/1G | 70 | 75 | 79 | 500 @ 0.2 mA | 0.2 @ 70 V | 0.9 |
Note: 1) Tested with pulses tp = 20 ms.
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