High power N Channel Power MOSFET JSCJ CJAC90SN12 with low RDS ON and shielded gate trench technology
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Product Description
Product Overview
The CJAC90SN12 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capability, high density cell design for ultra low RDS(ON), good stability with high EAS, and an excellent package for good heat dissipation. It is suitable for SMPS, general purpose applications, hard switched and high frequency circuits, Uninterruptible Power Supply, and power management.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC90SN12
- Package Type: PDFNWB5x6-8L
- Material: Plastic-Encapsulated
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Drain-Source Voltage | VDS | 120 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Tc=25 | 90 | A | ||
| Pulsed Drain Current | IDM | (1) | 360 | A | ||
| Maximum Power Dissipation | PD | (2) | 2 | W | ||
| Avalanche energy | EAS | * | mJ | |||
| Junction Temperature | TJ | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 120 | V | ||
| Zero gate voltage drain current | IDSS | VDS =120V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | (1) VDS =VGS, ID =250µA | 2.0 | 4.0 | V | |
| Drain-source on-resistance | RDS(on) | (1) VGS =10V, ID =20A | 5.4 | 6.8 | mΩ | |
| Total gate charge | Qg | VDS =60V,VGS =10V,ID =20A | nC | |||
| Gate-source charge | Qgs | 13.5 | ||||
| Gate-drain charge | Qgd | 6.7 | ||||
| Input Capacitance | Ciss | VDS =60V,VGS =0V,f =1MHz | 3670 | pF | ||
| Output Capacitance | Coss | 472 | pF | |||
| Reverse Transfer Capacitance | Crss | 7.6 | pF | |||
| Turn-on delay time | td(on) | VGS=10V, VDS=60V, RG=10Ω, ID=20A | 16 | ns | ||
| Turn-on rise time | tr | 9 | ns | |||
| Turn-off delay time | td(off) | 27 | ns | |||
| Turn-off fall time | tf | 12 | ns | |||
| Body diode voltage | VSD | IS=10A,VGS=0V | 1.2 | V | ||
| Reverse recovery time | Trr | VR=60V, IF=20A, diF/dt=500 A/µs | 50 | ns | ||
| Reverse recovery charge | Qrr | 300 | nC | |||
| Thermal Resistance from Junction to Case | RθJC | 0.85 | “/W | |||
| Thermal Resistance from Junction to Ambient | RθJA | (3) | 62.5 | “/W |
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