Plastic Encapsulate MOSFET JSCJ CJAC50N06 Designed for Load Switching and High Pulsed Drain Current
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Product Description
Product Overview
The CJAC50N06, a Plastic-Encapsulate MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, offers excellent RDS(ON), low gate charge, and operation with low gate voltages. Its design provides excellent heat dissipation and fast switching capabilities, making it suitable for load switching and PWM applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJAC50N06
- Material: Plastic-Encapsulate
- Color: Normal device (if no solid dot)
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | 50 | A | |||
| Pulsed Drain Current | IDM | 180 | A | |||
| Single Pulsed Avalanche Energy | EAS | 200 | mJ | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =60V, VGS =0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =± 25V | ±100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 2.0 | 2.9 | 4.0 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =20A | 5.3 | mΩ | ||
| Forward transconductance | gFS | VDS =10V, ID =15A | 20 | S | ||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 3890 | pF | ||
| Output capacitance | Coss | 297 | ||||
| Reverse transfer capacitance | Crss | 298 | ||||
| Total gate charge | Qg | VGS=10V, VDS=50V, ID=25A | 89 | nC | ||
| Gate-source charge | Qgs | VGS=10V, VDS=50V, ID=25A | 16 | nC | ||
| Gate-drain charge | Qg | VGS=10V, VDS=50V, ID=25A | 37 | nC | ||
| Turn-on delay time | td(on) | VDD=30V,ID=2A, VGS=10V,RL=15Ω RG=2.5Ω | 21 | ns | ||
| Turn-on rise time | tr | 31 | ||||
| Turn-off delay time | td(off) | 63 | ||||
| Turn-off fall time | tf | 29 | ||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=25A | 1.0 | V | ||
| Continuous drain-source diode forward current | IS | 50 | A | |||
| Pulsed drain-source diode forward current | ISM | 180 | A | |||
| Thermal Resistance from Junction to Ambient | RθJA | 40 | °C/W |
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