Low On Resistance P Channel MOSFET JSCJ CJ2309A Designed for Bi Directional Load Switch Applications
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Product Description
Product Overview
The CJ2309A is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology for excellent RDS(on). It is suitable for use as a uni-directional or bi-directional load switch.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: CJ2309A
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-60V,VGS = 0V,TJ=25 | -1 | A | ||
| Zero gate voltage drain current | IDSS | VDS =-60V,VGS = 0V,TJ=125 | -1 | mA | ||
| Gate-source leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-2A | 190 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-1.5A | 240 | m | ||
| Forward transconductance | gFS | VDS =-10V, ID =-2A | 3.1 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1 | -2.5 | V | |
| Input capacitance | Ciss | VDS =-30V,VGS =0V,f =1MHz | 130 | pF | ||
| Output capacitance | Coss | VDS =-30V,VGS =0V,f =1MHz | 180 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-30V,VGS =0V,f =1MHz | 45 | pF | ||
| Turn-on delay time | td(on) | VGS=-10V,VDD=-30V , ID=-1.5A,RG=3 | 18 | ns | ||
| Turn-on rise time | tr | VGS=-10V,VDD=-30V , ID=-1.5A,RG=3 | 15 | ns | ||
| Turn-off delay time | td(off) | VGS=-10V,VDD=-30V , ID=-1.5A,RG=3 | 38 | ns | ||
| Turn-off fall time | tf | VGS=-10V,VDD=-30V , ID=-1.5A,RG=3 | 12 | ns | ||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -0.81 | V | ||
| Total Gate Charge | Qg | VDS=-30V,ID=-1.5A, VGS=-10V | 32 | nC | ||
| Gate-Source Charge | Qgs | VDS=-30V,ID=-1.5A, VGS=-10V | 6 | nC | ||
| Gate-Drain Charge | Qg | VDS=-30V,ID=-1.5A, VGS=-10V | 18 | nC | ||
| Continuous drain-source diode forward current | IS | -1.6 | A | |||
| Pulsed drain-source diode forward current | ISM | -8 | A | |||
| Continuous Drain Current | ID | Ta=25 | -2 | A | ||
| Pulsed Drain Current | IDM | Ta=25 | -8 | A | ||
| Power Dissipation | PD | Ta=25 | 0.35 | W | ||
| Power Dissipation | PD | Tc=25 | 2.5 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W | |||
| Thermal Resistance from Junction to Case | RJC | Tc=25 | 50 | /W | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 |
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