Load switch and uninterruptible power supply P Channel MOSFET JSCJ CJAC70P06 with high density cell design
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Product Description
Product Overview
The CJAC70P06 is a P-Channel Power MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It offers a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, excellent thermal dissipation, and special process technology for high ESD capability. Ideal for battery switches, load switches, uninterruptible power supplies, SMPS, general purpose applications, and hard switched/high frequency circuits.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Part Number: CJAC70P06
- Package Type: PDFNWB56-8L
- Material: Plastic-Encapsulate MOSFETS
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -70 | A | |||
| Pulsed Drain Current | IDM | -280 | A | |||
| Single Pulsed Avalanche Energy | EAS | 320 | mJ | |||
| Power Dissipation | PD | 115 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | /W | |||
| Junction Temperature and Storage Temperature Range | TJ, Tstg | -55 | +150 | |||
| Thermal Resistance from Junction to Case | RJC | 1.09 | /W | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -60 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-48V, VGS =0V | -1.0µA | µA | ||
| TJ =25℃ | -100 | µA | ||||
| TJ =125℃ | 4.3 | µA | ||||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1.0 | -1.5 | -2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-20A | 7.6 | mΩ | ||
| VGS =-4.5V, ID =-10A | 9.2 | mΩ | ||||
| Forward transconductance | gFS | VDS =-10V, ID =-3A | 17 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-30V,VGS =0V, f =1MHz | 8600 | pF | ||
| Output capacitance | Coss | VGS =-4.5V, ID =-10A | 450 | pF | ||
| Reverse transfer capacitance | Crss | f =1MHz | 280 | pF | ||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=-10V, VDS=-48V, ID=-5A | 12500 | pC | ||
| Gate-source charge | Qgs | 700 | pC | |||
| Gate-drain charge | Qgd | 430 | pC | |||
| Turn-on delay time | td(on) | 12 | ns | |||
| Turn-on rise time | tr | 25 | ns | |||
| Turn-off delay time | td(off) | 140 | ns | |||
| Turn-off fall time | tf | 400 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-12A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -70 | A | |||
| Pulsed drain-source diode forward current | ISM | -280 | A | |||
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