Dual NPN Transistor JTD JTDMMDT3904DW SOT363 Package Plastic Encapsulate Suitable for Amplification

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Product Description

Product Overview

The MMDT3904DW is a dual NPN transistor in a SOT-363 package, ideal for low power amplification and switching applications. It features epitaxial planar die construction for reliable performance.

Product Attributes

Brand: JTD
Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
Package Type: SOT-363
Encapsulation: Plastic-Encapsulate Transistors
Marking: K6N

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Breakdown Voltages	V(BR)CBO	IC=10A,IE=0	60			V
	V(BR)CEO	IC=1mA,IB=0	40			V
	V(BR)EBO	IE=10A,IC=0	5			V
	ICBO	VCB=30V,IE=0			0.05	A
	IEBO	VEB=5V,IC=0			0.05	A
	ICEX	VCE=30V,VBE(off)=3V			0.05	A
	VCBO	IC=10A,IE=0	60			V
DC Current Gain (hFE)	hFE(1)	VCE=1V,IC=0.1mA	40
	hFE(2)	VCE=1V,IC=1mA	70
	hFE(3)	VCE=1V,IC=10mA	100		300
	hFE(4)	VCE=1V,IC=50mA	60
	hFE(5)	VCE=1V,IC=100mA	30
		VCE=1V,IC=10mA
Collector-Emitter Saturation Voltage	VCE(sat)1	IC=10mA,IB=1mA		0.2		V
Collector-Emitter Saturation Voltage	VCE(sat)2	IC=50mA,IB=5mA		0.3		V
Base-Emitter Saturation Voltage	VBE(sat)1	IC=10mA,IB=1mA	0.65	0.85		V
Base-Emitter Saturation Voltage	VBE(sat)2	IC=50mA,IB=5mA		0.95		V
Transition Frequency	fT	VCE=20V,IC=10mA,f=100MHz	300			MHz
Collector Output Capacitance	Cob	VCB=5V,IE=0,f=1MHz			4	pF
Noise Figure	NF	VCE=5V,Ic=0.1mA,f=1kHz,RS=1K		5		dB
Switching Times	td				35	nS
Switching Times	tr	VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA			35	nS
Switching Times	ts				200	nS
Switching Times	tf	VCC=3V, IC=10mA IB1=-IB2=1mA			50	nS
Collector Power Dissipation	PC	Ta=25 unless otherwise noted			0.2	W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150