Dual Transistor NPN NPN JTD JTDMMDT4401DW SOT363 Package Suitable for Amplification Switching

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Product Description

Product Overview

The MMDT4401DW is a Dual Transistor (NPN+NPN) featuring epitaxial planar die construction. It is ideal for low power amplification and switching applications.

Product Attributes

Brand: JTD
Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
Package: SOT-363

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Collector-Base Voltage	VCBO			60	V
Collector-Emitter Voltage	VCEO			40	V
Emitter-Base Voltage	VEBO			6	V
Collector Current -Continuous	IC			0.6	A
Collector Power Dissipation	PC			0.2	W
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	+150
Collector-base breakdown voltage	V(BR)CBO	IC= 100 A, IE=0	60		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	40		V
Emitter-base breakdown voltage	V(BR)EBO	IE= 100 A, IC=0	6		V
Collector cut-off current	ICBO	VCB= 50 V , IE=0		0.1	A
Collector cut-off current	ICEO	VCE= 35 V , IB=0		0.5	A
Emitter cut-off current	IEBO	VEB=5V , IC=0		0.1	A
DC current gain	hFE(1)	VCE=1V, IC= 0.1mA	20
DC current gain	hFE(2)	VCE=1V, IC= 1mA	40
DC current gain	hFE(3)	VCE=1V, IC= 10mA	80
DC current gain	hFE(4)	VCE=1V, IC= 150mA	100	300
DC current gain	hFE(5)	VCE=2V, IC= 500mA	40
Collector-emitter saturation voltage	VCE(sat)1	IC=150 mA, IB= 15mA		0.4	V
Collector-emitter saturation voltage	VCE(sat)2	IC=500 mA, IB= 50mA		0.75	V
Base-emitter saturation voltage	VBE(sat)1	IC= 150 mA, IB= 15mA	0.75	0.95	V
Base-emitter saturation voltage	VBE(sat)2	IC= 500 mA, IB= 50mA		1.2	V
Transition frequency	fT	VCE=10V,IC= 20mA,f=100MHz	250		MHz
Output capacitance	Cob	VCB=5V, IE= 0,f=1MHz		6.5	pF
Delay time	td			15	nS
Rise time	tr	VCC=30V, VBE=2V,IC=150mA ,IB1=15mA		20	nS
Storage time	tS			225	nS
Fall time	tf	VCC=30V, IC=150mA,IB1=-IB2=15mA		30	nS