PNP Transistor Model JTD JTDBC857BW SOT323 Package Perfect for Switching and Audio Frequency Amplifier

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Product Description

Product Overview

The BC856BW, BC857BW, and BC858BW are PNP transistors ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.

Product Attributes

Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
Origin: Shenzhen
Material: Plastic-Encapsulated Transistors
Package Type: SOT-323

Technical Specifications

Model	Parameter	Value	Unit	Conditions
BC856BW	Collector-Base Voltage (VCBO)	-80	V
	Collector-Base Voltage (VCBO)	-65	V	IC= -10mA, IB=0
	Collector-Emitter Voltage (VCEO)	-65	V
	Collector Current (IC) -Continuous	-0.1	A
	Collector Power Dissipation (PC*)	150	mW	Ta=25
BC857BW	Collector-Base Voltage (VCBO)	-50	V
	Collector-Base Voltage (VCBO)	-45	V	IC= -10mA, IB=0
	Collector-Emitter Voltage (VCEO)	-45	V
	Collector Current (IC) -Continuous	-0.1	A
	Collector Power Dissipation (PC*)	150	mW	Ta=25
BC858BW	Collector-Base Voltage (VCBO)	-30	V
	Collector-Base Voltage (VCBO)	-30	V	IC= -10mA, IB=0
	Collector-Emitter Voltage (VCEO)	-30	V
	Collector Current (IC) -Continuous	-0.1	A
	Collector Power Dissipation (PC*)	150	mW	Ta=25
All Models	Emitter-Base Voltage (VEBO)	-5	V	IE= -1A, IC=0
	Collector Cut-off Current (ICBO)	-15	nA	VCB= -30 V , IE=0
	DC Current Gain (hFE)	125		VCE= -5V, IC= -2mA (BC856AW, 857AW,858AW)
		220		VCE= -5V, IC= -2mA (BC856BW, 857BW,858BW)
		420		VCE= -5V, IC= -2mA (BC857CW,BC858CW)
	Collector-Emitter Saturation Voltage (VCE(sat))	-0.65	V	IC=-100mA, IB= -5mA
	Base-Emitter Saturation Voltage (VBE(sat))	-1.1	V	IC= -100mA, IB= -5mA
	Transition Frequency (fT)	100	MHz	VCE= -5V, IC= -10mA, f=100MHz
	Collector Capacitance (Cob)	4.5	pF	VCB=-10V, f=1MHz
	Junction and Storage Temperature Range (TJ,Tstg)	-55+150
	Thermal Resistance (RJA)	833	/W	From Junction To Ambient
	Device Marking	See Datasheet