General Purpose PNP Transistor JUXING MMBTA55 with 225mW Power Dissipation and SOT-23 Package Design

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Product Description

Product Overview

This document details the MMBTA55 PNP transistor, designed for general-purpose applications requiring high stability and reliability. It features a maximum power dissipation of 225mW and is housed in a compact SOT-23 package.

Product Attributes

Marking: 2H
Package: SOT-23
Epoxy UL Flammability: 94V-0
Mounting Position: Any
Brand: Not Specified
Origin: Not Specified
Material: Not Specified
Color: Not Specified
Certifications: Not Specified

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified)
Collector-Base Voltage	VCBO	-60	V
Collector-Emitter Voltage	VCEO	-60	V
Emitter-Base Voltage	VEBO	-4	V
Collector Current-Continuous	IC	-500	mA
Collector Power Dissipation	PC	225	mW
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55-+150
Thermal Resistance (Junction to Ambient)	RJA	556	/W
Electrical Characteristics (TA = 25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	-60	V	IC=-100uA, IE=0
Collector-emitter breakdown voltage	V(BR)CEO	-60	V	IC=-1mA, IB=0
Emitter-base breakdown voltage	V(BR)EBO	-4	V	IE=-100uA, IC=0
Collector cut-off current	ICBO	-100	nA	VCB=-60V, IE=0
Collector cut-off current	ICE0	-100	nA	VCE=-60V, IB=0
DC current gain	hFE(1)	100-400		VCE=-1V, IC=-10mA
DC current gain	hFE(2)	100		VCE=-1V, IC=-100mA
Collector-emitter saturation voltage	VCE(sat)	-0.25	V	IC=-100mA, IB=-10mA
Base-emitter voltage	VBE	-1.20	V	VCE=-1V, IC=-100mA
Transition frequency	fT	50	MHz	VCE=-1V, IC=-100mA,f=100MHz