PNP Transistor JUXING MMBTA42 1D SOT23 Small Outline Plastic Package High Voltage 300V Collector Current

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Product Description

Product Overview

The MMBTA42 is a PNP transistor designed for high voltage applications. It offers high stability and reliability, with a maximum power dissipation of 350mW. It is complementary to the MMBTA92.

Product Attributes

Marking: 1D
Package: SOT-23 Small Outline Plastic Package
Epoxy UL Flammability Rating: 94V-0
Mounting Position: Any

Technical Specifications

Parameters	Symbol	Value	Unit	Test Condition	Min	Max
Collector-Base Voltage	VCBO	300	V
Collector-Emitter Voltage	VCEO	300	V
Emitter-Base Voltage	VEBO	5	V
Collector Current-Continuous	IC	300	mA
Collector Power Dissipation	PC	350	mW
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55-+150
Thermal resistance From junction to ambient	RJA	357	/W
Collector-base breakdown voltage	V(BR)CBO	300	V	IC=100uA, IE=0	300
Collector-emitter breakdown voltage	V(BR)CEO	300	V	IC=1mA, IB=0	300
Emitter-base breakdown voltage	V(BR)EBO	5	V	IE=10uA, IC=0	5
Collector cut-off current	ICBO	250	nA	VCB=200V, IE=0		250
Emitter cut-off current	IEBO	100	nA	VEB=5V, IC=0		100
DC current gain	hFE(1)*			VCE=10V, IC=1mA	60
DC current gain	hFE(2)*			VCE=10V, IC=10mA	100	200
DC current gain	hFE(3)*			VCE=10V, IC=30mA	65
Collector-emitter saturation voltage	VCE(sat)*		V	IC=20mA, IB=2mA		0.20
Base -emitter saturation voltage	VBE(sat)*		V	IC=20mA, IB=2mA		0.90
Transition frequency	fT	50	MHz	VCE=20V, IC=100mA; f=30MHz