Compact SOT 563 package dual N channel MOSFET JSCJ 2N7002V designed for load switching and DC DC conversion
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The 2N7002V is a dual N-channel MOSFET in a SOT-563 package, designed for applications requiring low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds. It is suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by brand)
- Material: Plastic-Encapsulate (MOSFET), Polycarbonate resin (carrier tape), Polyester film (cover tape)
- Color: Clear (reels)
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0 V, ID=250 A | 60 | V | ||
| Gate-Threshold Voltage | Vth(GS) | VDS=VGS, ID=250 A | 1 | 1.6 | 2.5 | V |
| Gate-body Leakage | lGSS | VDS=0 V, VGS=20 V | 80 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60 V, VGS=0 V | 80 | nA | ||
| On-state Drain Current | ID(ON) | VGS=10 V, VDS=7 V | 500 | mA | ||
| Drain-Source On-Resistance | rDS(on) | VGS=10 V, ID=500mA | 0.9 | 2.5 | ||
| Drain-Source On-Resistance | rDS(on) | VGS=5 V, ID=50mA | 1.1 | 3.5 | ||
| Forward Transconductance | gfs | VDS=10 V, ID=200mA | 80 | 500 | mS | |
| Drain-source on-voltage | VDS(on) | VGS=10V, ID=500mA | 0.5 | 3.75 | V | |
| Drain-source on-voltage | VDS(on) | VGS=5V, ID=50mA | 0.05 | 0.375 | V | |
| Diode Forward Voltage | VSD | IS=115mA, VGS=0 V | 0.55 | 1.2 | V | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 50 | pF | ||
| Output Capacitance | COSS | VDS=25V, VGS=0V, f=1MHz | 25 | pF | ||
| Reverse Transfer Capacitance | CrSS | VDS=25V, VGS=0V, f=1MHz | 5 | pF | ||
| Turn-on Time | td(on) | VDD=25 V, RL=50, ID=500mA,VGEN=10 V, RG=25 | 20 | ns | ||
| Turn-off Time | td(off) | VDD=25 V, RL=50, ID=500mA,VGEN=10 V, RG=25 | 40 | ns |
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