Durable silicon controlled rectifier JSCJ CS030E 30-60uA sensitive gate SCR for pulse igniters and LED controllers

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Product Description

Product Overview

The CS030E is a sensitive gate SCR (Silicon Controlled Rectifier) featuring a PNPN 4-layer structure with mesa glass passivated technology and multi-layers metal electrodes. Designed for sensitive gate triggering, it is ideal for applications such as pulse igniters, LED controllers, and coffee machines. Its robust construction ensures reliable performance in demanding environments.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Package Type: TO-126K Plastic-Encapsulate Thyristors
Marking: CS030E (Part Number), XXX (Internal Code)

Technical Specifications

Symbol	Parameter	Test Condition	Value	Unit	Typical	Max	Min
ABSOLUTE RATINGS	VDRM/VRRM Repetitive peak off-state voltage	Tj=25	600	V
	IT(RMS) RMS on-state current	TO-126K(TC80)	3	A
	ITSM Non repetitive surge peak on-state current	Full sine wave, Tj(init)=25, tp=20ms; Fig. 3,5	20	A
	I2t I2t value	tp=10ms	2	As
	dIT/dt Critical rate of rise of on-state current	IG=2*IGT, tr10ns, F=120HZ, Tj=110	50	A/s
	TSTG Storage temperature		-40~+150
MAIN CHARACTERISTICS	IT(AV) Average on-state current	TO-126K(TC80)	2	A
	VDRM/ VRRM Repetitive peak off-state voltage	Tj=25	600	V
	IGM Peak gate current	tp=20s, Tj=110	0.2	A
	PG(AV) Average gate power	Tj=110	0.1	W
	Tj Operating junction temperature		-40~+110
ELECTRICAL CHARACTERISTICS	IGT Gate trigger current	VD=12V, RL =100, RGK =1k Fig. 6		A	10	200
	VGT Gate trigger voltage	ITM=4A , Fig. 4		V		1.5
	VGD Non-triggering gate voltage	VD=1/2VDRM, RGK=1k,Tj=110		V	100
	IH Holding current	VD=24V, Tj=25, Fig. 6		mA	3
	IL Latching current	VD=6V, RL =100, RGK =1k Fig. 6		mA	4
	VTM On-state Voltage	ITM=4A, RGK=1k, Tj=110		V		1.2
THERMAL RESISTANCES	Rth (j-c) Junction to case (AC)		7.2	/W
THERMAL RESISTANCES	Rth (j-a) Junction to ambient		100	/W
Repetitive peak off- state current	IDRM / IRRM	VD=VDRM/VRRM, Tj=25		A		200
Repetitive peak off- state current	IDRM / IRRM	VD=VDRM/VRRM,Tj=110		A		3
Critical rate of rise of off-state	dVD/dt	VD=67%VDRM, Tj=110		V/s		3