NPN Switching Transistor JSMSEMI MMBT3904 SOT23 Package General Purpose Amplification and Switching

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Product Description

MMBT3904 NPN Switching Transistor

The MMBT3904 is an NPN epitaxial planar die construction switching transistor designed for general switching and amplification applications. It offers a complementary PNP type (MMBT3906) and is available in a SOT-23 package.

Product Attributes

Brand: JSMICRO Semiconductor
Complementary PNP Type: MMBT3906
Package: SOT-23
MSL: 1

Technical Specifications

Symbol	Parameter	Conditions	Value	Unit
VCBO	Collector-base voltage	Open emitter	60	V
VCEO	Collector-emitter voltage	Open base	40	V
VEBO	Emitter-base voltage	Open collector	6	V
IC	Collector current (DC)		200	mA
ICM	Peak collector current		200	mA
IBM	Peak base current		100	mA
Ptot	Total power dissipation	Tamb25C	250	mW
Tstg	Storage temperature		-65 to +150	C
Tj	Junction temperature		150	C
ICBO	Collector cut-off current	IE = 0; VCB = 30 V	-50	nA
IEBO	Emitter cut-off current	IC = 0; VEB = 6 V	-50	nA
hFE	DC current gain	VCE = 1 V; IC= 0.1mA	60 - 300	-
		VCE = 1 V; IC= 1mA	80 - 300	-
		VCE = 1 V; IC= 10mA	100 - 300	-
		VCE = 1 V; IC= 50mA	60 - 300	-
		VCE = 1 V; IC= 100mA	30 - 300	-
VCEsat	Collector-emitter saturation voltage	IC = 10mA; IB = 1mA	-200	mV
VCEsat	Collector-emitter saturation voltage	IC = 50mA; IB = 5mA	-300	mV
VBEsat	Base-emitter saturation voltage	IC = 10mA; IB = 1mA	650 - 850	mV
VBEsat	Base-emitter saturation voltage	IC = 50mA; IB = 5mA	-950	mV
Cobo	Output Capacitance	IE = Ie= 0; VCB= 5V; f = 1MHz	-4	pF
Cibo	Input Capacitance	IC = Ic = 0; VBE=500mV; f =1MHz	-8	pF
fT	Transition frequency	IC =10mA; VCE =20V; f =100MHz	300	MHz
F	Noise figure	IC=100mA; VCE =5V; RS =1k;f =10Hz to15.7kHz	-5	dB
Switching times	td (delay time)	VCC=3Vdc, VBE=0.5Vdc	-35	ns
Switching times	tr (rise time)	IC=10mAdc, IB1=1mAdc	-35	ns
ts (storage time)	VCC=3Vdc, IC=10mAdc	-200	ns
tf (fall time)	IB1=IB2=1mAdc	-50	ns