High Density Cell Design N Channel MOSFET JSCJ AD 2N7002K with Low RDS ON and High Saturation Current
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Product Description
Product Overview
The AD-2N7002K is a Plastic-Encapsulated N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features a high-density cell design for low RDS(ON), making it suitable as a voltage-controlled small signal switch. With high saturation current capability and AEC-Q101 qualification, it is designed for various applications including battery switches, load switches, power tools, LED applications, DC/DC converters, and motor drive applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Model: AD-2N7002K
- Certification: AEC-Q101 qualified
- Marking: 72K
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 60 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS = 48V, VGS = 0V | - | - | 1.0 | A |
| Gate-body leakage current | IGSS1 | VGS = 20V, VDS = 0V | - | - | 10 | A |
| Gate-body leakage current | IGSS2 | VGS = 10V, VDS = 0V | - | - | 200 | nA |
| Gate-body leakage current | IGSS3 | VGS = 5V, VDS = 0V | - | - | 100 | nA |
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 1mA | 1.0 | 1.3 | 2.5 | V |
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 500mA | - | 0.9 | 2.5 | |
| Drain-source on-state resistance | RDS(on) | VGS = 4.5V, ID = 200mA | - | 1.1 | - | |
| Input capacitance | Ciss | VDS = 10V, VGS = 0V, f = 1MHz | - | - | 40 | pF |
| Output capacitance | Coss | - | - | - | 30 | pF |
| Reverse transfer capacitance | Crss | - | - | - | 10 | pF |
| Turn-on delay time | td(on) | VGS = 10V, VDS = 50V, RG = 50, RGS = 50, RL = 250 | - | - | 10 | ns |
| Turn-off delay time | td(off) | - | - | - | 15 | ns |
| Reverse recovery time | trr | VGS = 0V, IS = 300mA, VR = 25V, dIS/dt = -100A/s | - | - | 30 | ns |
| Drain-source diode forward voltage | VSD | IS = 300mA, VGS = 0V | - | - | 1.5 | V |
| Recovered charge | Qr | VGS = 0V, IS = 300mA, VR = 25V, dIS/dt = -100A/s | - | - | 30 | nC |
| Gate-source breakdown voltage | BVGSO | IGS = 1mA (open drain) | 21.5 | - | 30 | V |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 60 | V |
| Gate-source voltage | VGS | 20 | V |
| Continuous drain current | ID 1) | 340 | mA |
| Maximum power dissipation | PD 1) | 0.35 | W |
| Single pulsed avalanche energy | EAS 3) | 500 | mJ |
| Thermal resistance from junction to ambient | RJA 4) | 357 | C/W |
| Operating junction and storage temperature range | Tj, Tstg | -55 ~ 150 | C |
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