Silicon NPN Power Transistor JSMSEMI TIP3055 90W Dissipation 15A Collector Current TO247 Package Type

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Product Description

Product Overview

The TIP3055 is a silicon NPN power transistor designed for general-purpose switching and amplifier applications. It offers a robust 90W power dissipation at 25C case temperature and a continuous collector current of 15A. This transistor is the complement to the TIP2955 type.

Product Attributes

Brand: JSMICRO Semiconductor
Package: TO-247
Material: Silicon

Technical Specifications

Symbol	Parameter	Conditions	Value	Unit
VCEO(SUS)	Collector-emitter sustaining voltage	IC=30mA ;IB=0	60	V
VCEsat-1	Collector-emitter saturation voltage	IC=4A; IB=0.4A	1.1	V
VCEsat-2	Collector-emitter saturation voltage	IC=10A ;IB=3.3A	3.0	V
VBE	Base-emitter on voltage	IC=4A ; VCE=4V	1.5	V
ICEO	Collector cut-off current	VCE=30V; IB=0	0.7	mA
ICER	Collector cut-off current	VCE=70Vdc;RBE=100Ohm	1.0	mA
ICEV	Collector cut-off current	VCE=100Vdc,VBE(off)=1.5Vdc	5.0	mA
IEBO	Emitter cut-off current	VEB=7V; IC=0	5.0	mA
hFE-1	DC current gain	IC=4A ; VCE=4V	20-70
hFE-2	DC current gain	IC=10A ; VCE=4V	5.0
Is/b	Second breakdown collector current	With base forward biased VCE=30Vdc,t=1.0s, Nonrepetitive	3.0	A
fT	Transition frequency	IC=0.5A ; VCE=10V	2.5	MHz
VCBO	Collector-base voltage	Open emitter	100	V
VCEO	Collector-emitter voltage	Open base	60	V
VEBO	Emitter-base voltage	Open collector	7	V
IC	Collector current		15	A
IB	Base current		7	A
PC	Collector power dissipation	TC=25	90	W
Tj	Junction temperature		150
Tstg	Storage temperature		-65~150
Rth j-c	Thermal resistance junction to case		1.39	/W