Silicon Epitaxial Planar Type Transistor JSMSEMI SS8050 Suitable for Circuits Requiring 1.5A Current

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Product Description

Product Overview

The JSMICRO Semiconductor SS8050 is a Silicon Epitaxial Planar Transistor designed for high collector current applications. It offers a continuous collector current of 1.5A and is complementary to the SS8550 transistor. This device is suitable for various electronic circuits requiring robust current handling capabilities.

Product Attributes

Brand: JSMICRO Semiconductor
Model: SS8050
Material: Silicon Epitaxial Planar
Package Type: TO-92
Origin: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	Units
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				6	V
Collector Current - Continuous	IC				1.5	A
Collector Dissipation	PC	TC=25			2	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-65		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	40	-	-	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=2mA,IB=0	25	-	-	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0	6	-	-	V
Collector cut-off current	ICBO	VCB=35V,IE=0	-	-	0.1	A
Collector cut-off current	ICEO	VCE=20V,IB=0	-	-	0.1	A
Emitter cut-off current	IEBO	VEB=6V,IC=0	-	-	0.1	A
DC current gain	hFE	VCE=1V,IC=5mA	45	85	-
		VCE=1V,IC=100mA	40	135	160
		VCE=1V,IC=800mA	-	110	300
Collector-emitter saturation voltage	VCE(sat)	IC=800 mA, IB= 80mA	-	0.28	0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800 mA, IB= 80mA	-	0.98	1.2	V
Base-emitter voltage	VBE	VCE=1V, IC=10mA	-	0.66	1	V
Output capacitance	Cob	VCB=10V, IE=0, f=1MHz	-	9.0	-	pF
Transition frequency	fT	VCE=10V, IC= 50mA	100	190	-	MHz