PNP transistor JSMSEMI 2N5401 for switching and amplification in high voltage telephony applications
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Product Description
Product Overview
The 2N5401 is a PNP transistor designed for switching and amplification in high-voltage applications, particularly in telephony. It offers low current (Max. 600mA) and high voltage (Max. 160V) capabilities.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: 2N5401
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions |
| MAXIMUM RATINGS | ||||
| VCBO | Collector-Base Voltage | -160 | V | (Ta=25 unless otherwise noted) |
| VCEO | Collector-Emitter Voltage | -150 | V | (Ta=25 unless otherwise noted) |
| VEBO | Emitter-Base Voltage | -5 | V | (Ta=25 unless otherwise noted) |
| IC | Collector Current - Continuous | -0.6 | A | (Ta=25 unless otherwise noted) |
| PC | Collector Power Dissipation | 0.625 | W | (Ta=25 unless otherwise noted) |
| Tj | Junction Temperature | 150 | (Ta=25 unless otherwise noted) | |
| Tstg | Storage Temperature | -55-150 | (Ta=25 unless otherwise noted) | |
| ELECTRICAL CHARACTERISTICS | ||||
| V(BR)CBO | Collector-base breakdown voltage | -160 | V | IC= -100A, IE=0 |
| V(BR)CEO | Collector-emitter breakdown voltage | -150 | V | IC= -1mA, IB=0 |
| V(BR)EBO | Emitter-base breakdown voltage | -5 | V | IE= -10A, IC=0 |
| ICBO | Collector cut-off current | -50 | nA | VCB= -120 V, IE=0 |
| IEBO | Emitter cut-off current | -50 | nA | VEB= -3V, IC=0 |
| hFE(1) | DC current gain | 80 | VCE= -5V, IC=-1 mA | |
| hFE(2) | DC current gain | 60 | 300 | VCE= -5V, IC= -10 mA |
| hFE(3) | DC current gain | 50 | VCE= -5V, IC=-50 mA | |
| VCE(sat) | Collector-emitter saturation voltage | -0.5 | V | IC= -50mA, IB= -5 mA |
| VBE(sat) | Base-emitter saturation voltage | -1 | V | IC= -50mA, IB= -5 mA |
| fT | Transition frequency | 100 | 300 MHz | VCE=-5V, IC=-10mA, f =30MHz |
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