Robust Dual N Channel MOSFET JSCJ CJQ9926 Featuring Advanced Trench Technology for Battery Packs
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Product Description
CJQ9926 Dual N-Channel MOSFET
The CJQ9926 is a Dual N-Channel MOSFET featuring an advanced trench process technology and high-density cell design for ultra-low on-resistance. It offers high power and current handling capability, making it ideal for Li-ion battery pack applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: Q9926
- Marking: Solid dot = Green molding compound device, if none, the normal device. Q9926= Device code YY=Date Code Solid dot = Pin1 indicator
- Package: SOP8
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current * | ID | 4.8 | A | |||
| Pulsed Drain Current | IDM | 30 | A | |||
| Power Dissipation * | PD | 1.25 | W | |||
| Thermal Resistance from Junction to Ambient * | RJA | Surface Mounted on 1 x 1 FR4 Board. | 100 | / W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| STATIC CHARACTERISTICS (Ta=25 unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage (note 1) | VGS(th) | VDS =VGS, ID =250A | 0.6 | 1.0 | 1.2 | V |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =2.5V, ID =5A | 28 | 40 | m | |
| VGS =4.5V, ID =6A | 20 | 30 | m | |||
| Forward transconductance (note 1) | gFS | VDS =15V, ID =6A | 15 | S | ||
| DYNAMIC CHARACTERISTICS (note 2) | ||||||
| Input Capacitance | Clss | VDS=10V,VGS=0V, f=1.0MHz | 640 | pF | ||
| Output Capacitance | Coss | 140 | pF | |||
| Reverse Transfer Capacitance | Crss | 80 | pF | |||
| SWITCHING CHARACTERISTICS (note 2) | ||||||
| Turn-on delay time | td(on) | VGEN=4.5V,VDD=15V, RGEN=6, ID =1A, RL=15 | 35 | ns | ||
| Turn-on rise time | tr | 60 | ns | |||
| Turn-off delay time | td(off) | 75 | ns | |||
| Turn-off fall time | tf | 30 | ns | |||
| Total gate charge | Qg | VDS =15V,VGS =4.5V,ID =6A | 20 | nC | ||
| Gate-source Charge | Qgs | 3 | nC | |||
| Gate-drain Charge | Qgd | 3.3 | nC | |||
| SOURCE-DRAIN DIODE CHARACTERISTICS | ||||||
| Maximum diode forward current | IS | 1 | A | |||
| Diode forward voltage (note 1) | VSD | IS=1.7A,VGS=0V | 1.2 | V | ||
| Source-Drain Reverse Recovery Time | trr | IF = 1.7 A, di/dt = 100 A/s | 80 | ns | ||
Notes:
1. Pulse Test : Pulse Width300s, Duty Cycle2%.
2. Guaranteed by design, not subject to production.
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