Power MOSFET JSCJ CJQ4606 in SOP8 Package for Low Voltage Switching in Commercial Industrial Devices
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MOQ:
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Delivery Time:
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Product Description
Product Overview
Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The SOP8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: CJQ4606
- Package Type: SOP8
- Material: Plastic-Encapsulate
- Color: Normal device (if no solid dot), Green molding compound device (if solid dot)
Technical Specifications
| Parameter | Symbol | N-Channel Test Condition | Min | Typ | Max | Units | P-Channel Test Condition | Min | Typ | Max | Units |
| Drain-Source Voltage | VDS | 30 | V | -30 | V | ||||||
| Gate-Source Voltage | VGS | ±20 | V | ±20 | V | ||||||
| Continuous Drain Current | ID | Ta=25 | 6.9 | A | Ta=25 | -6.0 | A | ||||
| Continuous Drain Current | ID | Ta=70 | 5.5 | A | Ta=70 | -5 | A | ||||
| Pulsed Drain Current | IDM | 20 | A | -20 | A | ||||||
| Power Dissipation | PD | Ta=25 | 1.4 | W | W | ||||||
| Thermal Resistance Junction to Ambient | RJA | 89 | /W | /W | |||||||
| Operating Junction Temperature | TJ | 150 | |||||||||
| Storage Temperature | TSTG | -55 | +150 | -55 | +150 | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS=0, ID =250A | 30 | V | VGS=0, ID =-250A | -30 | V | ||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1 | 1.5 | 3 | V | VDS =VGS, ID =-250A | -1 | -1.7 | -3 | V |
| Gate-body leakage | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ±100 | nA | |||||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | A | VDS =-30V, VGS =0V | -1 | A | ||||
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =6A | 19 | 28 | m | VGS =-10V, ID =-6A | 29 | 36 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =4A | 42 | m | VGS =-4.5V, ID =-4A | 55 | m | ||||
| Forward transconductance | gfs | VDS =10V, ID =6A | S | VDS =-10V, ID =-6A | 4 | S | |||||
| Diode forward voltage | VSD | IS=1.7A,VGS=0V | 1.2 | V | IS=-1.7A,VGS=0V | -1.2 | V | ||||
| Total gate charge | Qg | 9.5 | nC | nC | |||||||
| Gate-source charge | Qgs | 1.5 | nC | 2 | nC | ||||||
| Gate-drain charge | Qgd | 3 | nC | 3 | nC | ||||||
| Turn-on delay time | td(on) | 3.3 | ns | 7 | ns | ||||||
| Rise time | tr | 4.8 | ns | 3 | ns | ||||||
| Turn-off delay time | td(off) | 26 | ns | 20 | ns | ||||||
| Fall time | tf | 12 | ns | ns | |||||||
| Input Capacitance | Ciss | 633 | pF | pF | |||||||
| Output Capacitance | Coss | 65 | pF | 101 | pF | ||||||
| Reverse Transfer Capacitance | Crss | 55 | pF | 65 | pF |
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