Power Dissipation 0625 Watt PNP Epitaxial Silicon Transistor JSMSEMI S9012 with 05 Amp Collector Current
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Product Description
Product Overview
The JSMICRO Semiconductor S9012 is a PNP Epitaxial Silicon Transistor designed for general-purpose applications. It offers features such as a power dissipation of 0.625 W and a collector current of -0.5 A, making it suitable for various electronic circuits.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: S9012
- Type: PNP Epitaxial Silicon Transistor
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | UNIT |
| Power Dissipation | PCM | Tamb=25℃ | 0.625 | W | ||
| Collector Current | ICM | -0.5 | A | |||
| Collector-Base Voltage | V(BR)CBO | -40 | V | |||
| Operating and Storage Junction Temperature Range | Tj, Tstg | -55 | +150 | ℃ | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC= -100µA, IE=0 | -40 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= -1 mA, IB=0 | -25 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE= -100µA, IC=0 | -5 | V | ||
| Collector Cut-off Current | ICBO | VCB=- 40V, IE=0 | -0.1 | µA | ||
| Collector Cut-off Current | ICBO | VCB=-20V, IE=0 | -0.1 | µA | ||
| Emitter Cut-off Current | IEBO | VEB=- 5V, IC=0 | -0.1 | µA | ||
| DC Current Gain | hFE(1) | VCE=-1V, IC=-50mA | 64 | 300 | ||
| DC Current Gain | hFE(2) | VCE=-1V, IC= -500mA | 40 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC= -500 mA, IB= -50mA | -0.6 | V | ||
| Base-Emitter Voltage | VBE(sat) | IC= -500 mA, IB=- 50mA | -1.2 | V | ||
| Transition Frequency | fT | VCE=-6V,IC=-20mA, f=30MHz | 150 | MHz |
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