Low frequency power amplifier transistor JSMSEMI 2SD667A featuring DC current gain and voltage specs

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The 2SD667/A is a low frequency power amplifier designed as a complementary pair with the 2SB647/A. It offers robust performance with high breakdown voltages and reliable DC current gain characteristics.

Product Attributes

Brand: JSMICRO Semiconductor
Product Type: Transistor (NPN)
Package: TO-92

Technical Specifications

Model	Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
2SD667/A	Collector-base breakdown voltage	V(BR)CBO	IC=10A,IE=0	120			V
	Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0			80/100	V
	Emitter-base breakdown voltage	V(BR)EBO	IE=10A,IC=0			5	V
	Collector cut-off current	ICBO	VCB=100V,IE=0			10	A
	Emitter cut-off current	IEBO	VEB=4V,IC=0			10	A
	DC current gain	hFE(1)	VCE=5V,IC=150mA	60		320
	DC current gain	hFE(1)	VCE=5V,IC=150mA	60		320
	DC current gain	hFE(2)	VCE=5V,IC=500mA	30
	Collector-emitter saturation voltage	VCE(sat)	IC=500mA,IB=50mA			1	V
	Base-emitter voltage	VBE	VCE=5V,IC=150mA		1.5		V
2SD667	DC current gain (hFE(1))	hFE(1)	VCE=5V,IC=150mA	60		120/200/320
	Classification of hFE(1)	Rank B	VCE=5V,IC=150mA	60		120
	Classification of hFE(1)	Rank C	VCE=5V,IC=150mA	100		200
2SD667A	DC current gain (hFE(1))	hFE(1)	VCE=5V,IC=150mA	60		120/200/320
	Classification of hFE(1)	Rank B	VCE=5V,IC=150mA	60		120
	Classification of hFE(1)	Rank C	VCE=5V,IC=150mA	100		200
2SD667, 2SD667A	Transition frequency	fT	VCE=5V,IC=150mA		140		MHz
2SD667, 2SD667A	Collector output capacitance	Cob	VCB=10V,IE=0,f=1MHz			12	pF
2SD667, 2SD667A	Collector Power Dissipation	PC				900	mW
2SD667, 2SD667A	Junction Temperature	TJ				150
2SD667, 2SD667A	Storage Temperature	Tstg		-55		150
2SD667, 2SD667A	Thermal Resistance Junction to Ambient	RJA			139		/W