PNP Power Transistor JSMSEMI 2SA1492 Semiconductor Component for Audio and General Purpose Circuits

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Product Description

Product Overview

The JSMICR0 Semiconductor PNP Power Transistor 2SA1492 is a high-performance component designed for audio and general-purpose applications. It features a high Collector-Emitter Breakdown Voltage of -180V (Min) and good linearity of hFE, making it a reliable choice for demanding circuits. It is a complement to the 2SC3856 type.

Product Attributes

Brand: JSMICR0
Type: Semiconductor PNP Power Transistor
Model: 2SA1492
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ.	Max	Unit
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= -50mA ; IB= 0	-180			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= -5.0A; IB= -0.5A			-2.0	V
ICBO	Collector Cutoff Current	VCB= -180V ; IE=0			-100	A
IEBO	Emitter Cutoff Current	VEB= -6V; IC=0			-100	A
hFE	DC Current Gain	IC= -3A ; VCE= -4V	50		180
COB	Output Capacitance	IE= 0 ; VCB= -10V;f= 1.0MHz			500	pF
fT	Current-GainBandwidth Product	IE= 0.5A ; VCE= -12V		20		MHz
ton	Turn-on Time	IC= -10A ,RL= 4, IB1= -IB2= -1A,VCC= -40V		0.6		s
tstg	Storage Time	IC= -10A ,RL= 4, IB1= -IB2= -1A,VCC= -40V		0.9		s
tf	Fall Time	IC= -10A ,RL= 4, IB1= -IB2= -1A,VCC= -40V		0.2		s
VCBO	Collector-Base Voltage				-180	V
VCEO	Collector-Emitter Voltage				-180	V
VEBO	Emitter-Base Voltage				-6	V
IC	Collector Current-Continuous				-15	A
IB	Base Current-Continuous				-4	A
PC	Collector Power Dissipation @ TC=25				130	W
TJ	Junction Temperature				150
Tstg	Storage Temperature Range		-55		150