Power semiconductor JSCJ CGWT40N120F2KAD IGBT with TO-247 package and positive temperature coefficient
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Product Description
Product Overview
The CGWT40N120F2KAD is a high-performance Insulated Gate Bipolar Transistor (IGBT) from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing their second-generation Trench and Field Stop (FS) structure. It offers a 1200V breakdown voltage, low Vce(sat), and a positive temperature coefficient, leading to low switching losses and good EMI behavior. Designed for parallel use, this IGBT is suitable for demanding applications such as solar power systems, Uninterruptible Power Supplies (UPS), Flexible Printed Circuits (FPC), and welding equipment.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CGWT40N120F2KAD
- Package: TO-247
- Marking: WT40N120F2KAD
- Origin: China (implied by company name and location)
- Color: Green molding compound device (indicated by solid dot on marking)
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions |
| Absolute Maximum Ratings | VCES | 1200 | V | |
| VGES | ±20 | V | ||
| IC | 80 | A | ||
| IC @ TC=100 | 40 | A | ||
| IC pulse | 160 | A | tp limited by TJmax | |
| Electrical Characteristics | V(BR)CES | 1200 | V | VGE=0V, ICE=1mA |
| ICES | 1.0 | mA | VGE=0V, VCE=1200V | |
| IGES | ±250 | nA | VGE=±20V | |
| VGE(th) | 4.5 - 7.5 | V | IC=250uA ,VCE=VGE | |
| Dynamic Parameters | Cies | 4225 | pF | VCE=30V,VGE=0V f=1MHz |
| Coes | 125 | pF | ||
| Cres | 27.5 | pF | ||
| Switching Parameters | td(on) | 41 | ns | VCE=600V, IC=40A, Rg=10, VGE=15V, Inductive Load TJ=25 |
| tr | 93 | ns | ||
| td(off) | 171 | ns | ||
| Switching Energy | Eon | 3 | mJ | (3) Including the reverse recovery of the diode. |
| Eoff | 1.4 | mJ | ||
| Ets | 4.4 | mJ | ||
| Thermal Characteristics | RJC (IGBT) | 0.42 | /W | |
| RJC (Diode) | 1.2 | /W |
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