Mesa glass passivated SCR JSCJ CS008L 10-30uA featuring sensitive gate triggering and PNPN 4 layer structure

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Product Description

Product Overview

This product is a sensitive gate SCR (Silicon Controlled Rectifier) featuring a PNPN 4-layer structure and mesa glass passivation technology. It utilizes multi-layer metal electrodes and is designed for sensitive gate triggering applications. The device is housed in a SOT-23-3L plastic-encapsulated package.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Package Type: SOT-23-3L
Technology: Mesa Glass Passivated
Structure: PNPN 4-layer
Electrodes: Multi Layers Metal

Technical Specifications

Symbol	Parameter	Test Condition	Value	Unit	Min	Max
MAIN CHARACTERISTICS	Repetitive peak off-state voltage	Tj=25	600	V
	RMS on-state current	SOT-23-3LK(TC60)Fig. 1,2	0.5	A
	Non repetitive surge peak on-state current	Full sine wave Tj(init)=25, tp=20ms; Fig. 3,5	8	A
	I2t value	tp=10ms	0.32	A2s
ELECTRICAL CHARACTERISTICS	Gate trigger current	Fig. 6		A	10	200
	Gate trigger voltage	VD=12V, IT =10mA, Tj=25, Fig. 6		V	0.8
	Non-triggering gate voltage	VD=VDRM, Tj=125		V		0.2
	Holding current	VD=12V, IT =10mA, Tj=25		mA		100
	On-state Voltage	ITM=1.2A , Fig. 4		V		1.5
THERMAL RESISTANCES	Junction to case (AC)		23	/W
THERMAL RESISTANCES	Junction to ambient		400	/W