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650V IGBT transistor JSCJ CGWT40N65F2KAD with fast soft recovery diode and optimized EMI performance

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Product Description

Product Overview

The CGWT40N65F2KAD is a 650V breakdown voltage IGBT from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, featuring low Vce(sat) and a positive temperature coefficient. It offers high-speed switching with low switching loss and a fast/soft recovery freewheeling diode, ensuring good EMI behavior. This device is designed for parallel use due to its advanced Trench and FS (Field Stop) Structure, providing high application frequency and low collector-emitter saturation voltage and switching loss.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Package: TO-247
  • Marking: WT40N65F2KAD
  • Color: Normal device (or Green molding compound if marked with solid dot)

Technical Specifications

SymbolParameterTest ConditionsMin.Typ.Max.Unit
STATIC PARAMETERS
V(BR)CESCollector-Emitter Breakdown VoltageVGE=0V,ICE=250uA650----V
ICESZero Gate Voltage Collector CurrentVGE=0V,VCE=650V----1.0mA
IGESGate-Emitter leakage currentVGE=20V----250nA
VGE=30V----500nA
VGE(th)Gate-Emitter Threshold VoltageIC=1mA ,VCE=VGE4--6.5V
VFDiode Forward VoltageIF=40A,Tc=25--1.56--V
IF=40A,Tc=125--1.30--V
IF=40A,Tc=150--1.23--V
VCE(sat)Collector-Emitter Saturation VoltageIC=40A,VGE=15V,TJ=25--1.7--V
IC=40A,VGE=15V,TJ=125--2.0--V
IC=40A,VGE=15V,TJ=150--2.1--V
DYNAMIC PARAMETERS
CiesInput CapacitanceVCE=30V,VGE=0V f=1MHz--1819--pF
CoesOutput Capacitance--175--pF
CresReverse Transfer Capacitance--22--pF
RgGate ResistanceVGE=0V, CE short, f=1MHz--1.6--
SWITCHING PARAMETERS
td(on)Turn-On Delay TimeVCE=400V,IC=40A,Rg=10, VGE=15V, Inductive Load TJ=25--21--ns
trCurrent Rise Time--46--ns
td(off)Turn-Off Delay Time--67--ns
tfCurrent Fall Time--34--ns
EonTurn-On Switching Energy(3)--1.23--mJ
EoffTurn-Off Switching Energy--0.34--mJ
EtsTotal Switching Energy--1.57--mJ
QGTotal Gate ChargeVCE = 480 V, IC = 40 A, VGE = 15 V--79.2--nC
QGEGate to Emitter Charge--19.3--nC
QGCGate to Collector Charge--44.8--nC
trrDiode reverse recovery timeVR = 400V, IF = 40A, diF/dt = 100A/s--74--nS
QrrDiode reverse recovery charge--144--nC
IrrmDiode peak reverse recovery current--3.7--A
Absolute Maximum Ratings
VCESCollector-Emitter Voltage650V
VGESGate-Emitter Voltage20V
Gate-Emitter transient voltage30V
ICCollector Current @TC=25C(2)80A
ICCollector Current @TC=100C40A
ICpulsePulsed Collector Current, tp limited by TJmax120A
ILM(1)Turn-off latching current120A
IFContinuous Diode Forward Current @TC=25C(2)80A
IFContinuous Diode Forward Current @TC=100C40A
IFMDiode Pulsed Current, Limited by TJmax120A
tscShort Circuit Withstand TimeVGE=15V, VCE400V, TJ=1505us
PDPower Dissipation @TC=25C250W
PDPower Dissipation @TC =100C125W
TJJunction Temperature-40175
TSTGStorage Temperature-55150
TLMaximum lead temperature for soldering260
Thermal Characteristics
RJCMaximum IGBT Junction-to-Case0.6/W
RJCMaximum Diode Junction-to-Case1.8/W
RJAMaximum Junction-to-Ambient40/W

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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