650V IGBT transistor JSCJ CGWT40N65F2KAD with fast soft recovery diode and optimized EMI performance
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The CGWT40N65F2KAD is a 650V breakdown voltage IGBT from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, featuring low Vce(sat) and a positive temperature coefficient. It offers high-speed switching with low switching loss and a fast/soft recovery freewheeling diode, ensuring good EMI behavior. This device is designed for parallel use due to its advanced Trench and FS (Field Stop) Structure, providing high application frequency and low collector-emitter saturation voltage and switching loss.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: TO-247
- Marking: WT40N65F2KAD
- Color: Normal device (or Green molding compound if marked with solid dot)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| STATIC PARAMETERS | ||||||
| V(BR)CES | Collector-Emitter Breakdown Voltage | VGE=0V,ICE=250uA | 650 | -- | -- | V |
| ICES | Zero Gate Voltage Collector Current | VGE=0V,VCE=650V | -- | -- | 1.0 | mA |
| IGES | Gate-Emitter leakage current | VGE=20V | -- | -- | 250 | nA |
| VGE=30V | -- | -- | 500 | nA | ||
| VGE(th) | Gate-Emitter Threshold Voltage | IC=1mA ,VCE=VGE | 4 | -- | 6.5 | V |
| VF | Diode Forward Voltage | IF=40A,Tc=25 | -- | 1.56 | -- | V |
| IF=40A,Tc=125 | -- | 1.30 | -- | V | ||
| IF=40A,Tc=150 | -- | 1.23 | -- | V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=40A,VGE=15V,TJ=25 | -- | 1.7 | -- | V |
| IC=40A,VGE=15V,TJ=125 | -- | 2.0 | -- | V | ||
| IC=40A,VGE=15V,TJ=150 | -- | 2.1 | -- | V | ||
| DYNAMIC PARAMETERS | ||||||
| Cies | Input Capacitance | VCE=30V,VGE=0V f=1MHz | -- | 1819 | -- | pF |
| Coes | Output Capacitance | -- | 175 | -- | pF | |
| Cres | Reverse Transfer Capacitance | -- | 22 | -- | pF | |
| Rg | Gate Resistance | VGE=0V, CE short, f=1MHz | -- | 1.6 | -- | |
| SWITCHING PARAMETERS | ||||||
| td(on) | Turn-On Delay Time | VCE=400V,IC=40A,Rg=10, VGE=15V, Inductive Load TJ=25 | -- | 21 | -- | ns |
| tr | Current Rise Time | -- | 46 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 67 | -- | ns | |
| tf | Current Fall Time | -- | 34 | -- | ns | |
| Eon | Turn-On Switching Energy | (3) | -- | 1.23 | -- | mJ |
| Eoff | Turn-Off Switching Energy | -- | 0.34 | -- | mJ | |
| Ets | Total Switching Energy | -- | 1.57 | -- | mJ | |
| QG | Total Gate Charge | VCE = 480 V, IC = 40 A, VGE = 15 V | -- | 79.2 | -- | nC |
| QGE | Gate to Emitter Charge | -- | 19.3 | -- | nC | |
| QGC | Gate to Collector Charge | -- | 44.8 | -- | nC | |
| trr | Diode reverse recovery time | VR = 400V, IF = 40A, diF/dt = 100A/s | -- | 74 | -- | nS |
| Qrr | Diode reverse recovery charge | -- | 144 | -- | nC | |
| Irrm | Diode peak reverse recovery current | -- | 3.7 | -- | A | |
| Absolute Maximum Ratings | ||||||
| VCES | Collector-Emitter Voltage | 650 | V | |||
| VGES | Gate-Emitter Voltage | 20 | V | |||
| Gate-Emitter transient voltage | 30 | V | ||||
| IC | Collector Current @TC=25C | (2) | 80 | A | ||
| IC | Collector Current @TC=100C | 40 | A | |||
| ICpulse | Pulsed Collector Current, tp limited by TJmax | 120 | A | |||
| ILM(1) | Turn-off latching current | 120 | A | |||
| IF | Continuous Diode Forward Current @TC=25C | (2) | 80 | A | ||
| IF | Continuous Diode Forward Current @TC=100C | 40 | A | |||
| IFM | Diode Pulsed Current, Limited by TJmax | 120 | A | |||
| tsc | Short Circuit Withstand Time | VGE=15V, VCE400V, TJ=150 | 5 | us | ||
| PD | Power Dissipation @TC=25C | 250 | W | |||
| PD | Power Dissipation @TC =100C | 125 | W | |||
| TJ | Junction Temperature | -40 | 175 | |||
| TSTG | Storage Temperature | -55 | 150 | |||
| TL | Maximum lead temperature for soldering | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Maximum IGBT Junction-to-Case | 0.6 | /W | |||
| RJC | Maximum Diode Junction-to-Case | 1.8 | /W | |||
| RJA | Maximum Junction-to-Ambient | 40 | /W | |||
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