TRIAC JSCJ BTA26-600BW with TO3PK Plastic Encapsulation and Mesa Glass Passivated Multi Layers Electrodes

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Product Description

Product Overview

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD offers TO-3PK Plastic-Encapsulate TRIACs, featuring an NPNPN 5-layer structure, mesa glass passivated technology, and multi-layers metal electrodes. These TRIACs provide high junction temperature, good commutation performance, and high dV/dt and dI/dt capabilities. With an insulating voltage of 2500V(RMS), they are suitable for applications such as heater control, mixers, and motor speed controllers.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Package Type: TO-3PK
Structure: NPNPN 5-layer
Technology: Mesa Glass Passivated
Electrodes: Multi Layers Metal
Insulating Voltage: 2500V(RMS)

Technical Specifications

Part Number	VDRM/VRRM (V)	IT(RMS) (A)	ITSM (A)	I2t (A2s)	dIT/dt (A/s)	IGM (A)	PG(AV) (W)	VTM (V)	IDRM/IRRM (A/mA)	Rth(j-c) (/W)	Rth(j-a) (/W)
BTA26-600(C/B)W	600	25	250	340	50	4	1	1.55	5 (Tj=25), 2.0 (Tj=125)	0.9	50
BTA26-800(C/B)W	800	25	250	340	50	4	1	1.55	5 (Tj=25), 2.0 (Tj=125)	0.9	50

Electrical Characteristics

Symbol	Parameter	Test Condition	Value (CW)	Value (BW)	Unit
IGT	Gate trigger current	VD=12V, RL=33, Tj=25, Fig. 6	35	50	mA
VGT	Gate trigger voltage	--	1.3	1.3	V
VGD	Non-triggering gate voltage	VD=VDRM, Tj=125	0.2	0.2	V
IH	Holding current	IT=500mA, Fig. 6	50	75	mA
IL	Latching current	IG=1.2IGT, Fig. 6	- 60; 80	- 80; 90	mA
dVD/dt	Critical rate of rise of off-state	VD=67%VDRM, Gate Open Tj=125	500	1000	V/s
VTM	On-state Voltage	ITM tp=380s , Fig. 4	1.55	1.55	V