Power Control Triac JSCJ CT316B-800C 800V 16A Plastic Encapsulate Thyristors TO220BK Package Device

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Product Description

Product Overview

The CT316B series TRIACs are 5-layer structure devices designed for AC power control applications. They feature a glass-passivated mesa technology, high junction temperature capability, and good commutation performance, making them suitable for controlling heaters, mixers, and motor speeds. Available in 600V and 800V versions, these TRIACs offer high dV/dt and dI/dt ratings.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Material: Plastic-Encapsulate Thyristors
Package Type: TO-220BK

Technical Specifications

Part Number	VDRM/VRRM (V)	IT(RMS) (A)	VTM (V)	IGT (mA)	Test Condition	Storage Temp ()	Operating Temp ()
CT316B-600S/C/B	600	16	1.55	10 (S), 35 (C), 50 (B)	ITM=23A, tp=380s	-40~+150	-40~+125
CT316B-800S/C/B	800	16	1.55	10 (S), 35 (C), 50 (B)	ITM=23A, tp=380s	-40~+150	-40~+125

Symbol	Parameter	Value	Unit	Test Condition
ITSM	Non repetitive surge peak on-state current	160	A	Full sine wave, Tj(init)=25, tp=20ms
I2t	I2t value	140	A2s	tp=10ms
dIT/dt	Critical rate of rise of on-state current	50	A/s	IG=2*IGT, tr10ns, F=120HZ, Tj=125
IGM	Peak gate current	4	A	tp=20s, Tj=125
PG(AV)	Average gate power	1	W	Tj=125
VGT	Gate trigger voltage	1.3	V	--, VD=12V, RL=33, Tj=25
VGD	Non-triggering gate voltage	0.2	V	VD=VDRM, Tj=125
IH	Holding current	30 (-), 50 ()	mA	IT=500mA, Fig. 6
IL	Latching current	50 (-), 70 ()	mA	IT=500mA, Fig. 6
dVD/dt	Critical rate of rise of off-state	500	V/s	VD=67%VDRM, Gate Open Tj=125
IDRM/IRRM	Repetitive peak off- state current	10 (Tj=25), 50 (Tj=125)	A	VD=VDRM/VRRM
Rth(j-c)	Junction to case (AC)	1.2	/W
Rth(j-a)	Junction to ambient	60	/W