TO-220BK Plastic Encapsulated Thyristor JSCJ CT312B-800C Suitable for Motor Speed and Heater Control

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Product Description

Product Overview

The CT312B series TRIACs feature a 5-layer NPNPN structure with multi-layer metal electrodes and mesa glass passivated technology. These TRIACs offer high junction temperature capabilities, high dV/dt and dI/dt, and good commutation performance, making them suitable for applications such as heater control, mixers, and motor speed controllers.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Origin: China (implied by manufacturer name and website)
Material: Plastic-Encapsulate Thyristors
Packaging: TO-220BK

Technical Specifications

Part Number	VDRM/VRRM (V)	IT(RMS) (A)	VTM (V)	IGT (mA)	VGT (V)	VGD (V)	IH (mA)	IL (mA)	dVD/dt (V/s)	IDRM/IRRM (A)	TSTG (C)	Tj (C)
CT312B-600S/C/B	600	12	1.55	≤1.3 (I-II-III)	≤35 (I-II-III)	≥0.2 (IV)	≤50 (I-III)	≤70 (II)	≤15 (Tj=125)	≤5 (Tj=25)	-40~+150	-40~+125
CT312B-800S/C/B	800	12	1.55	≤1.3 (I-II-III)	≤35 (I-II-III)	≥0.2 (IV)	≤50 (I-III)	≤70 (II)	≤15 (Tj=125)	≤5 (Tj=25)	-40~+150	-40~+125

Symbol	Parameter	Test Condition	Value	Unit
IT(RMS)	RMS on-state current		12	A
ITSM	Non repetitive surge peak on-state current	Full sine wave, tp=20ms	120	A
I2t	I2t value	tp=10ms	78	A2s
dIT/dt	Critical rate of rise of on-state current	IG=2*IGT, tr10ns, F=120HZ, Tj=125	50	A/s
IGM	Peak gate current	tp=20s, Tj=125	4	A
PG(AV)	Average gate power	Tj=125	1	W
Rth(j-c)	Junction to case (AC)		1.4	/W
Rth(j-a)	Junction to ambient		60	/W