Multi layer metal electrode TRIAC JSCJ CT408B 800S designed for precise AC power control and 4 quadrant

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The CT408B series are NPNPN 5-layer structure TRIACs featuring a mesa glass-passivated technology, multi-layer metal electrodes, and high junction temperature capabilities. These TRIACs offer good commutation performance and are designed for 4-quadrant operation. They are suitable for applications requiring precise control of AC power.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Package Type: TO-220BK
Certifications: Not specified in source

Technical Specifications

Part Number	VDRM/VRRM (V)	IT(RMS) (A)	VTM (V)	ITSM (A)	I2t (A2s)	dIT/dt (A/s)	IGM (A)	PG(AV) (W)	TSTG ()	Tj ()	Rth(j-c) (/W)	Rth(j-a) (/W)
CT408B-600S/C	600	8	1.55	80	36	50	2	0.5	-40~+150	-40~+125	1.6	60
CT408B-800S/C	800	8	1.55	80	36	50	2	0.5	-40~+150	-40~+125	1.6	60

Parameter	Test Condition	Quadrant I-III (Max)	Quadrant IV (Max)	Unit
IGT (Gate trigger current)	VD=12V, IT =1A, Tj=25	1.3	10	mA
VGT (Gate trigger voltage)	VD=12V, IGT=0.1A, Tj=25	1.55	20	V
VGD (Non-triggering gate voltage)	VD=VDRM, Tj=125	0.2	10	V
IH (Holding current)	VD=12V, IT =1A, Tj=25	1	5	mA
IL (Latching current)	VD=12V, IT =1A, Tj=25	1	5	mA
dVD/dt (Critical rate of rise of off-state)	VD=67%VDRM, Gate Open, Tj=125	10	35	V/s
VTM (On-state Voltage)	ITM=10A, tp=380s	1.55	1.55	V
IDRM / IRRM (Repetitive peak off- state current)	VD=VDRM/VRRM, Tj=25	8	35	A
IDRM / IRRM (Repetitive peak off- state current)	VD=VDRM/VRRM, Tj=125	1	10	mA