Medium power switching transistor JSMSEMI MMBT4401 NPN silicon epitaxial planar for general purpose

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Product Description

MMBT4401 NPN Silicon Epitaxial Planar Transistor

The MMBT4401 is an NPN Silicon Epitaxial Planar Transistor designed for medium power amplification and switching applications. It features epitaxial planar die construction and is ideal for general-purpose and switching applications. A complementary PNP type, MMBT4403, is also available.

Product Attributes

Brand: JSMICRO Semiconductor
Material: Silicon
Package Type: SOT-23
Complementary PNP Type: MMBT4403

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				6	V
Collector Current - Continuous	IC				600	mA
Collector Power Dissipation	PC	@ Ta=25			350	mW
Junction and Storage Temperature	Tj,Tstg		-55		150
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0	40			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0	6			V
Collector cut-off current	ICBO	VCB=50V,IE=0			0.1	A
Collector cut-off current	ICEO	VCE=35V,IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0			0.1	A
DC current gain	hFE	VCE=1V,IC=0.1mA	20
DC current gain	hFE	VCE=1V,IC=1.0mA	40
DC current gain	hFE	VCE=1V,IC=10mA	80
DC current gain	hFE	VCE=1V,IC=150mA	100
DC current gain	hFE	VCE=2V,IC=500mA	40	300
Collector-emitter saturation voltage	VCE(sat)	IC=150mA, IB=15mA		0.4		V
Collector-emitter saturation voltage	VCE(sat)	IC=500mA, IB=50mA		0.75		V
Base-emitter saturation voltage	VBE(sat)	IC=150mA, IB=15mA		0.75	1.2	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB=50mA		0.95		V
Transition frequency	fT	VCE=10V, IC= 20mA, f=100MHz		250		MHz
Collector output capacitance	Cob	VCB=5V,IE=0,f=1MHz			6.5	pF