PNP silicon power transistor JSMSEMI TIP42C suitable for medium power linear switching applications

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Price: Negotiable

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Product Description

Product Overview

The TIP42 series is a complementary PNP silicon power transistor in a TO-220 plastic package, designed for medium power linear switching applications. It offers robust performance for amplification tasks.

Product Attributes

Brand: JSMICRO Semiconductor
Complementary to: TIP41

Technical Specifications

Parameter	Symbol	TIP42	TIP42A	TIP42B	TIP42C	Unit	Test Conditions	Min	Typ	Max
Collector to Base Voltage	VCBO	-40	-60	-80	-100	V
Collector to Emitter Voltage	VCEO	-40	-60	-80	-100	V
Emitter to Base Voltage	VEBO					-5.0	V
Collector Current - Continuous	IC					-6.0	A
Peak Collector Current	ICP					-10	A
Base Current - Continuous	IB					-2.0	A
Collector Power Dissipation	PC					2.0	W
Collector Power Dissipation	PC(Tc=25)					65	W
Junction Temperature	Tj					150
Storage Temperature Range	Tsag					-55150
Collector to Emitter Breakdown Voltage	VCEO	-40	-60	-80	-100	V	IC=-30mA IB=0
Collector Cut-Off Current	ICEO	-0.7	-0.7	-0.7	-0.7	mA	VCE=-30V IB=0 (TIP42-42A) / VCE=-60V IB=0 (TIP42B-42C)
Collector Cut-Off Current	ICES	-400	-400	-400	-400	A	VCE=-40V VEB=0 (TIP42) / VCE=-60V VEB=0 (TIP42A) / VCE=-80V VEB=0 (TIP42B) / VCE=-100V VEB=0 (TIP42C)
Emitter Cut-Off Current	IEBO					-1.0	mA	VEB=-5.0V IC=0
DC Current Gain	hFE(1)					15		75			VCE=-4.0V IC=-3.0A
DC Current Gain	hFE(2)					30					VCE=-4.0V IC=-0.3A
Collector to Emitter Saturation Voltage	VCE(sat)					-1.5	V	IC=-6.0A IB=-0.6A
Base to Emitter Voltage	VBE					-2.0	V	IC=-6.0A VCE=-4.0V
Transition Frequency	fT					3.0	MHz	VCE=-10V IC=-500mA