NPN Silicon Transistor in SOT23 Package JSMSEMI MMBTA44 with High Voltage and Low Saturation Voltage

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Product Description

Product Overview

SOT-23 Plastic Package NPN Silicon Transistor. Features high voltage and low saturation voltage, making it suitable for high voltage control circuits. Available in hFE classifications ranging from 50 to 200.

Product Attributes

Brand: JSMICR0 Semiconductor
Model: MMBTA44
Package: SOT-23 Plastic Package
Origin: Semiconductor (implied by brand)

Technical Specifications

Parameter	Symbol	Rating Unit	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage	VCBO	500					V
Collector to Emitter Voltage	VCEO	400					V
Emitter to Base Voltage	VEBO	6.0					V
Collector Current	IC	300					mA
Collector Power Dissipation	PC	350	(Ta=25)				mW
Collector Power Dissipation	PC	1.5	(TC=25)				W
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage	VCBO		IC=100A, IE=0	500			V
Collector to Emitter Breakdown Voltage	VCEO		IC=1.0mA, IB=0	400			V
Emitter to Base Breakdown Voltage	VEBO		IE=10A, IC=0	6.0			V
Collector Cut-Off Current	ICBO		VCB=400V, IE=0		0.1		A
Collector Cut-Off Current	ICEO		VCE=400V, VBE=0		0.5		A
Emitter Cut-Off Current	IEBO		VCE=4.0V, IC=0		0.1		A
DC Current Gain	hFE(1)		VCE=10V, IC=10mA	50		200
DC Current Gain	hFE(2)		VCE=10V, IC=100mA		40
DC Current Gain	hFE(3)		VCE=10V, IC=50mA		45
DC Current Gain	hFE(4)		VCE=10V, IC=1.0mA		40
Collector-Emitter Saturation Voltage	VCE(sat)(1)		IC=1.0mA, IB=0.1mA		0.4		V
Collector-Emitter Saturation Voltage	VCE(sat)(2)		IC=10mA, IB=1.0mA		0.5		V
Collector-Emitter Saturation Voltage	VCE(sat)(3)		IC=50mA, IB=5.0mA		0.75		V
Base-Emitter Saturation Voltage	VBE(sat)		IC=10mA, IB=1.0mA		0.75		V
Output Capacitance	Cob		VCB=20V, IE=0, f=1.0MHz		7.0		pF