Low noise silicon epitaxial planar transistor JSMSEMI S9014 suitable for pre amplifier applications

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Product Description

Product Overview

The S9014 is a Silicon Epitaxial Planar Transistor designed for per-amplifier low level and low noise applications. It offers excellent hFE linearity and a power dissipation of 0.2W. This transistor is complementary to the S9015.

Product Attributes

Brand: JSMICRO Semiconductor
Material: Silicon Epitaxial Planar
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector-Base Voltage	VCBO				50	V
Collector-Emitter Voltage	VCEO				45	V
Emitter-Base Voltage	VEBO				5	V
Collector Current - Continuous	IC				100	mA
Collector Dissipation	PC	@ TA=25			200	mW
Junction and Storage Temperature	TJ, TSTG		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=0.1mA,IB=0	45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0	5			V
Collector cut-off current	ICBO	VCB=50V,IE=0			0.1	A
Collector cut-off current	ICEO	VCE=35V,IB=0			0.1	A
Emitter cut-off current	IEBO	VEB=3V,IC=0			0.1	A
DC current gain	hFE	VCE=5V,IC=1mA	200		1000
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB= 5mA		0.3		V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB= 5mA			1	V
Base-emitter on voltage	VBE (on )	VCE=5V, IC=2mA		0.7		V
Output capacitance	Cob	VCB=10V, IE=0, f=1MHz			3.5	pF
Transition frequency	fT	VCE=6V, IC= 20mA f=30MHz		150		MHz
hFE Classification Rank L			200		450
hFE Classification Rank H			450		1000