Silicon PNP Darlington Power Transistor JSMSEMI MJD127T4G-JSM for Amplifier and Switching Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MJD127T4G is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, high DC current gain, and is 100% avalanche tested, ensuring robust device performance and reliable operation. The lead is formed for surface mount applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Base Voltage | VCBO | -100 | V | |
| Collector-Emitter Voltage | VCEO | -100 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current-Continuous | IC | -8 | A | |
| Total Power Dissipation @ Ta=25 | PC | Ta=25 | 1.75 | W |
| Collector Power Dissipation | PC | TC=25 | 20 | W |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature Range | Tstg | -55~150 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= -30mA; IB= 0 | -100 | V |
| Collector-Emitter Saturation Voltage | VCE(sat)-1 | IC=-4A; IB= -16mA | -2.0 | V |
| Collector-Emitter Saturation Voltage | VCE(sat)-2 | IC=-8A; IB= -80mA | -4.0 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-8A; IB= -80mA | -4.5 | V |
| Base-Emitter Voltage | VBE(ON) | IC= -4A; VCE= -4V | -2.8 | V |
| Collector Cutoff Current | ICEO | VCE=-50V; IE= 0 | -10 | uA |
| Emitter Cutoff Current | IEBO | VEB=-5V; IC= 0 | -2 | mA |
| DC Current Gain | hFE1 | IC= -4A; VCE=- 4V | 1000-12000 | |
| DC Current Gain | hFE2 | IC=-8A; VCE= -4V | 100 | |
| Current-GainBandwidth Product | fT | IC=-3A; VCE=- 4V | 4 | MHz |
| Output Capacitance | COB | IE=0; VCB= -10V; f= 1.0MH | 300 | pF |
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