Low Noise Amplifier Transistor JSMSEMI 2SC3356-R25 Silicon Planar Type for VHF UHF CATV Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The 2SC3356-R25 is a Silicon Epitaxial Planar Transistor designed for low noise amplification in VHF, UHF, and CATV bands. It offers low noise figure (NF=1.1dB TYP.) and high gain (Ga=11dB TYP., MAG=13dB TYP.), making it suitable for demanding RF applications.

Product Attributes

Brand: JSMICRO Semiconductor
Type No.: 2SC3356-R25
Marking: R25
Package Code: SOT-23-3L
Material: Silicon Epitaxial Planar Transistor
Origin: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=10A,IE=0			20	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0			12	V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A,IC=0			3	V
Collector cut-off current	ICBO	VCB=10V,IE=0			1	A
Emitter cut-off current	IEBO	VEB=1V,IC=0			1	A
DC current gain	hFE	VCE=10V,IC=20mA	50	120	300
Transition frequency	fT	VCE=10V,IC=20mA			7	GHz
Insertion power gain	\|S21e\|	VCE=10V, IC=20mA, f=1GHz		11.5		dB
Feed-back capacitance	Cre	VCB=10V, IE=0,f=1MHz		0.55	1.0	pF
Noise Figure	NF	VCE=10V,IC=7mA, f=1GHz		1.1	2.0	dB

Maximum Ratings

Parameter	Symbol	Value	Units
Collector-Base Voltage	VCBO	20	V
Collector-Emitter Voltage	VCEO	12	V
Emitter-Base Voltage	VEBO	3	V
Collector Current -Continuous	IC	100	mA
Collector Dissipation	PC	200	mW
Junction and Storage Temperature	Tj,Tstg	-65 to +150

Package Information

Package	Dimensions (mm)	Shipping
SOT-23-3L	A: 2.80-3.00, B: 1.50-1.70, C: 1.00-1.20, D: 0.35-0.45, E: 0.35-0.55, G: 1.80-2.00, H: 0.02-0.10, J: 0.10-0.20, K: 2.60-3.00	3000/Tape&Reel