High Temperature Operating NPN Transistor JSMSEMI S9013 with 150 Celsius Maximum Ambient Temperature

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Product Description

Product Overview

The JSMICRO S9013 is an NPN Epitaxial Silicon Transistor designed for general-purpose applications. It offers a power dissipation of 0.625 W at 25C ambient temperature and can operate up to 150C. Key features include a collector current of 0.5 A and a collector-base voltage of 40 V.

Product Attributes

Brand: JSMICRO
Product Name: S9013
Type: NPN Epitaxial Silicon Transistor
Origin: Semiconductor

Technical Specifications

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	Ic= 100A, IE=0			40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 1 mA, IB=0			25	V
Emitter-base breakdown voltage	V(BR)EBO	IE= 100A, IC=0			5	V
Collector cut-off current	ICBO	VCB= 40V, IE=0			0.1	A
Collector cut-off current	ICEO	VCE=20V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0			0.1	A
DC current gain	hFE(1)	VCE=1V, IC=50mA	64		300
DC current gain	hFE(2)	VCE=1V, IC= 500mA			40
Collector-emitter saturation voltage	VCE(sat)	IC= 500 mA, IB= 50mA			0.6	V
Base-emitter voltage	VBE(sat)	IC= 500 mA, IB= 50mA			1.2	V
Transition frequency	fT	VCE=6V,IC=20mA, f=30MHz		150		MHz