Epitaxial Planar Die NPN Transistor JSMSEMI 2N5551 for Medium Power Amplification and Switching Uses

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Product Description

Product Overview

The JSMICRO Semiconductor 2N5551 is an NPN General Purpose Transistor, ideal for medium power amplification and switching applications. It features an epitaxial planar die construction and is also available in a lead-free version. A complementary PNP type is also available.

Product Attributes

Brand: JSMICRO Semiconductor
Model: 2N5551
Type: NPN General Purpose Transistor
Construction: Epitaxial planar die
Availability: Lead-free version available
Complementary Type: PNP available

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Max.	Unit
Collector-base voltage	VCBO	@ Ta=25		180	V
Collector-emitter voltage	VCEO	@ Ta=25		160	V
Emitter-base voltage	VEBO	@ Ta=25		6	V
Collector current (DC)	IC	@ Ta=25		0.6	A
Collector dissipation	PC	@ Ta=25		0.35	W
Thermal resistance, Junction to ambient	RJA	@ Ta=25		357	C/W
Junction and storage temperature	Tj ,Tstg	@ Ta=25	-55	+150	C
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	180		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=0.1mA,IB=0	160		V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A,IC=0	6		V
Collector cut-off current	ICBO	IE = 0; VCB = 120V		-50	nA
Emitter cut-off current	IEBO	IC = 0; VEB = 4V		-50	nA
DC current gain	hFE	VCE = 5V; IC= 1mA	80	300
DC current gain	hFE	VCE = 5V;IC = 10mA	100
DC current gain	hFE	VCE = 5V;IC = 50mA	30
Collector-emitter saturation voltage	VCE(sat)	IC = 10mA; IB=1mA		0.15	V
Collector-emitter saturation voltage	VCE(sat)	IC = 50mA; IB = 5mA		0.2	V
Base-emitter saturation voltage	VBE(sat)	IC=10mA; IB=1mA		1	V
Base-emitter saturation voltage	VBE(sat)	IC=50mA; IB=5mA		1	V
Transition frequency	fT	IC=10mA; VCB=10V; f=100MHz	100	300	MHz
Output capacitance	Cobo	IE=10mA; VCE =10V; f=1.0MHz		6.0	pF