Electronic Applications PNP Silicon Transistor JSMSEMI S8550 Featuring Defined Electrical Parameters

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The S8550 is a PNP Silicon General Purpose Transistor designed for various electronic applications. It offers reliable performance with clearly defined electrical characteristics and absolute maximum ratings.

Product Attributes

Brand: JSMICRO Semiconductor
Complementary to: S8050

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Conditions
Collector-base Breakdown Voltage	V(BR)CBO	-40	-	-	V	IC = -100 A, IE = 0
Collector-emitter Breakdown Voltage	V(BR)CEO	-25	-	-	V	IC = -1 mA, IB = 0
Emitter-base Breakdown Voltage	V(BR)EBO	-5	-	-	V	IE = -100 A, IC = 0
Collector Cut-off Current	ICBO	-	-	-0.1	A	VCB = -40 V, IE = 0
Collector Cut-off Current	ICEO	-	-	-0.1	A	VCE = -20 V, IB = 0
Emitter Cut-off Current	IEBO	-	-	-0.1	A	VEB = -3 V, IC = 0
DC Current Gain	hFE(1)	85	-	400	-	VCE = -1 V, IC = -50 mA
DC Current Gain	hFE(2)	50	-	-	-	VCE = -1 V, IC = -500 mA
Collector-emitter Saturation Voltage	VCE(sat)	-	-	-0.6	V	IC = -500 mA, IB = -50 mA
Base-emitter Saturation Voltage	VBE(sat)	-	-	-1.2	V	IC = -500 mA, IB = -50 mA
Transition Frequency	fT	150	-	-	MHz	VCE = -6 V, IC= -20 mA, f = 30 MHz

hFE Classification

Rank	Range
B	85 - 160
C	120 - 200
D	160 - 300

Absolute Maximum Ratings

Parameter	Symbol	Ratings	Unit
Collector to Base Voltage	VCBO	-40	V
Collector to Emitter Voltage	VCEO	-25	V
Emitter to Base Voltage	VEBO	-5	V
Collector Current	IC	-500	mA
Total Power Dissipation	PD	625	mW
Junction, Storage Temperature	TJ, TSTG	+150, -55 ~ +150