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JSMSEMI TIP127 JSM Silicon PNP Darlington Power Transistor with High Collector Current and Amplifier

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Price: Negotiable
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Delivery Time: Negotiable
Product Description

Product Overview

The TIP125/126/127 are Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain, and low collector saturation voltage, making them a complementary type to the TIP120/121/122 series.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Material: Silicon

Technical Specifications

ParameterConditionsTIP125TIP126TIP127Unit
VCBO (Collector-base voltage)Open emitter-60-80-100V
VCEO (Collector-emitter voltage)Open base-60-80-100V
VEBO (Emitter-base voltage)Open collector-5V
IC (Collector current-DC)-5A
ICM (Collector current-Pulse)-8A
IB (Base current-DC)-120mA
PC (Collector power dissipation)TC=2565W
Ta=252W
Tj (Junction temperature)150
Tstg (Storage temperature)-65~150
VCEO(SUS) (Collector-emitter sustaining voltage)IC=-0.1A, IB=0-60-80-100V
VCEsat-1 (Collector-emitter saturation voltage)IC=-3A ,IB=-12mA-2.0V
VCEsat-2 (Collector-emitter saturation voltage)IC=-5A ,IB=-20mA-4.0V
VBE (Base-emitter on voltage)IC=-3.0A ; VCE=-3V-2.5V
ICBO (Collector cut-off current)TIP125 VCB=-60V, IE=0-0.2mA
TIP126 VCB=-80V, IE=0-0.2mA
TIP127 VCB=-100V, IE=0-0.2mA
ICEO (Collector cut-off current)TIP125 VCE=-30V, IB=0-0.5mA
TIP126 VCE=-40V, IB=0-0.5mA
TIP127 VCE=-50V, IB=0-0.5mA
IEBO (Emitter cut-off current)VEB=-5V; IC=0-2mA
hFE-1 (DC current gain)IC=-0.5A ; VCE=-3V1000
hFE-2 (DC current gain)IC=-3.0A ; VCE=-3V1000
Cob (Output capacitance)IE=0 ; VCB=-10V,f=0.1MHz300pF

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
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