Silicon Epitaxial Planar Transistor for Amplifier Applications JSMSEMI 2SC3356-R25 VHF UHF CATV Bands
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Product Description
Product Overview
The 2SC3356-R25 is a Silicon Epitaxial Planar Transistor designed for low noise amplifier applications in VHF, UHF, and CATV bands. It offers excellent low noise characteristics (NF=1.1dB TYP.) and high gain (Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz). It also provides high power gain (MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz).
Product Attributes
- Brand: JSMICRO Semiconductor
- Origin: Not specified
- Material: Silicon Epitaxial Planar
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
| Collector-Base Voltage | VCBO | @ Ta=25 | 20 | V | ||
| Collector-Emitter Voltage | VCEO | @ Ta=25 | 12 | V | ||
| Emitter-Base Voltage | VEBO | @ Ta=25 | 3 | V | ||
| Collector Current -Continuous | IC | @ Ta=25 | 100 | mA | ||
| Collector Dissipation | PC | @ Ta=25 | 200 | mW | ||
| Junction and Storage Temperature | Tj,Tstg | @ Ta=25 | -65 | +150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 20 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 12 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 3 | V | ||
| Collector cut-off current | ICBO | VCB=10V,IE=0 | 1 | A | ||
| Emitter cut-off current | IEBO | VEB=1V,IC=0 | 1 | A | ||
| DC current gain | hFE | VCE=10V,IC=20mA | 50 | 120 | 300 | |
| Transition frequency | fT | VCE=10V,IC= 20mA | 7 | GHz | ||
| Insertion power gain | |S21e|2 | VCE=10V, IC= 20mA , f=1GHz | 11.5 | dB | ||
| Feed-back capacitance | Cre | VCB=10V, IE=0,f=1MHz | 0.55 | 1.0 | pF | |
| Noise Figure | NF | VCE=10V,IC=7mA, f=1GHz | 1.1 | 2.0 | dB |
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