General Purpose Amplification Transistor JSMSEMI 2SC1623 Silicon Epitaxial Planar NPN Type for Audio

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Product Description

Product Overview

The 2SC1623 is an NPN Silicon Epitaxial Planar Transistor designed for audio frequency general-purpose amplification. It features high DC current gain (hFE=200 TYP) and a high voltage rating of VCEO=50V, making it suitable for various amplifier applications.

Product Attributes

Brand: JSMICRO Semiconductor
Material: Silicon Epitaxial Planar
Package Type: SOT-23
Moisture Sensitivity Level (MSL): 1

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	Units
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0			60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0			50	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0			5	V
Collector cut-off current	ICBO	VCB=60V,IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0			0.1	A
DC current gain	hFE	VCE=6V,IC=1mA	90	200	600
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=10mA		0.15	0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=10mA		0.86	1.0	V
Base Emitter Voltage	VBE	VCE=6V, IC=1mA	0.55	0.62	0.65	V
Transition frequency	fT	VCE=6V, IE= -10mA			250	MHz
Output capacitance	Cob	VCB=6V, IE= 0,f=1.0MHz			3.0	pF

hFE Classification

Rank	Range	Marking
L4	90-180	L4
L5	135-270	L5
L6	200-400	L6
L7	300-600	L7

Maximum Ratings

Parameter	Symbol	Value	Units
Collector-Base Voltage	VCBO	60	V
Collector-Emitter Voltage	VCEO	50	V
Emitter-Base Voltage	VEBO	5	V
Collector Current -Continuous	IC	100	mA
Collector Dissipation	PC	200	mW
Junction and Storage Temperature	TJ, TSTG	-55 to +150