High current high voltage silicon epitaxial planar transistor JSMSEMI C1815 designed for amplifier applications

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Product Description

Product Overview

The C1815 is a silicon epitaxial planar transistor designed for general-purpose amplifier applications. It offers high voltage and high current capabilities with excellent hFE linearity and low noise. This complementary transistor to the 2SA1015 is available in a SOT-23 package.

Product Attributes

Brand: JSMICRO Semiconductor
Material: Silicon Epitaxial Planar
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	UNIT
Breakdown Voltage	V(BR)CBO	IC=100A,IE=0	60			V
	V(BR)CEO	IC=0.1mA,IB=0	50			V
	V(BR)EBO	IC=0.1mA,IC=0	5			V
Cut-off Current	ICBO	VCB=60V,IE=0			0.1	A
Cut-off Current	ICEO	VCE=50V,IB=0			0.1	A
Emitter Cut-off Current	IEBO	VEB=5V,IC=0			0.1	A
DC Current Gain	hFE	VCE=6V,IC=2mA	130		400
DC Current Gain	hFE	VCE=6V,IC=150mA	25	100
Collector-Emitter Saturation Voltage	VCE(sat)	IC=100mA, IB=10mA		0.1	0.25	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=100mA, IB=10mA			1	V
Transition Frequency	fT	VCE=10V, IC= 1mA f=30MHz		80		MHz

hFE Classification

Rank	Range
L	130-200
H	200-400

Maximum Ratings (@ Ta=25)

Parameter	Symbol	Value	Units
Collector-Base Voltage	VCBO	60	V
Collector-Emitter Voltage	VCEO	50	V
Emitter-Base Voltage	VEBO	5	V
Collector Current -Continuous	IC	150	mA
Base Current	IB	50	mA
Collector Dissipation	PC	400	mW
Junction and Storage Temperature	Tj,Tstg	-55 to +150