General Purpose NPN Transistor JSMSEMI S9018 Featuring 200mW Power Dissipation and Amplification

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Product Description

Product Overview

The S9018 is an NPN epitaxial silicon transistor designed for general-purpose applications. It features a high current gain bandwidth product and a power dissipation of 200mW. This transistor is suitable for various electronic circuits requiring amplification and switching capabilities.

Product Attributes

Brand: JSMICRO Semiconductor
Material: Silicon Epitaxial Planar
Package Type: SOT-23

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Units
VCBO	Collector-Base Voltage				25	V
VCEO	Collector-Emitter Voltage				18	V
VEBO	Emitter-Base Voltage				4	V
IC	Collector Current -Continuous				50	mA
PC	Collector Dissipation	@ Ta=25			200	mW
Tj,Tstg	Junction and Storage Temperature		-55		150
V(BR)CBO	Collector-base breakdown voltage	IC=100A,IE=0	25			V
V(BR)CEO	Collector-emitter breakdown voltage	IC=0.1mA,IB=0	18			V
V(BR)EBO	Emitter-base breakdown voltage	IE=-100A,IC=0	4			V
ICBO	Collector cut-off current	VCB=20V,IE=0			0.1	A
ICEO	Collector cut-off current	VCE=15V,IB=0			0.1	A
IEBO	Emitter cut-off current	VEB=3V,IC=0			0.1	A
hFE	DC current gain	VCE=5V,IC=1mA	70	190
VCE(sat)	Collector-emitter saturation voltage	IC=10 mA, IB= 1mA			0.5	V
VBE(sat)	Base-emitter saturation voltage	IC=10 mA, IB= 1mA			1.4	V
fT	Transition frequency	VCE=5V, IC= 5mA, f=400MHz		600		MHz