Medium power silicon planar NPN transistor JSMSEMI FMMT493 designed for general purpose electronics

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Product Description

Product Overview

The FMMT493 is an NPN silicon planar medium power transistor designed for general-purpose applications. It offers complementary pairing with the FMMT593.

Product Attributes

Brand: JSMICRO Semiconductor
Marking: 493

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				120	V
Collector-Emitter Voltage	VCEO				100	V
Emitter-Base Voltage	VEBO				5	V
Collector Current	IC				1000	mA
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			250	mW
Thermal Resistance Junction To Ambient	RJA			500		/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	120			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=10mA, IB=0	100			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5			V
Collector cut-off current	ICBO	VCB=100V, IE=0			0.1	A
Collector cut-off current	ICES	VCES=100V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=4V, IC=0			0.1	A
DC current gain	hFE(1)	VCE=10V, IC=1mA		100
DC current gain	hFE(2)	VCE=10V, IC=250mA		100	300
DC current gain	hFE(3)	VCE=10V, IC=0.5A		60
DC current gain	hFE(4)	VCE=10V, IC=1A		20
Collector-emitter saturation voltage	VCE(sat)1	IC=500mA, IB=50mA		0.3		V
Collector-emitter saturation voltage	VCE(sat)2	IC=1A, IB=100mA		0.6		V
Base-emitter saturation voltage	VBE(sat)	IC=1A, IB=100mA		1.15		V
Base-emitter voltage	VBE	VCE=10V, IC=1A		1		V
Transition frequency	fT	VCE=10V,IC=50mA, f=100MHz		150		MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz		10		pF