Transistor JSMSEMI MMBTH10 Silicon Epitaxial Planar Type Suitable for VHF UHF Frequency Applications

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Product Description

Product Overview

The MMBTH10 is a Silicon Epitaxial Planar Transistor designed for high transition frequency applications. It offers efficient power dissipation and is suitable for VHF/UHF transistor applications.

Product Attributes

Brand: JSMICRO Semiconductor
Package Type: SOT-23
Material: Silicon Epitaxial Planar
Origin: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	30		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0	25		V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A,IC=0	3		V
Collector cut-off current	ICBO	VCB=25V,IE=0		0.1	A
Emitter cut-off current	IEBO	VEB=2V,IC=0		0.1	A
DC current gain	hFE	VCE=10V,IC=4.0mA	60
Collector-emitter saturation voltage	VCE(sat)	IC=4.0mA, IB= 0.4mA		0.5	V
Base-emitter on voltage	VBE(on)	IC=4.0mA, VCE=10V		0.95	V
Transition frequency	fT	VCE=10V, IC= 4.0mA, f=100MHz	650		MHz
Collector-Base Capacitance	Ccb	VCB=10V,IE=0,f=1.0MHz		0.7	pF
Collector-Base Feedback Capacitance	Crb	VCB=10V,IE=0,f=1.0MHz	0.35	0.65	pF
Collector Base Time Constant	rb'CC	IC=4mA,VCB=10V, f=31.8MHz		9.0	pS

Maximum Ratings

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	30	V
VCEO	Collector-Emitter Voltage	25	V
VEBO	Emitter-Base Voltage	3	V
IC	Collector Current -Continuous	50	mA
PC	Collector Dissipation	350	mW
TJ, TSTG	Junction and Storage Temperature	-55 to +150